Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-22T17:09:20.922Z Has data issue: false hasContentIssue false
  • English
  • Français

Atomic Resolution Imaging of Dislocations in AlGaN and the Efficiency of UV LEDs

Published online by Cambridge University Press:  01 August 2018

Colin J. Humphreys ,
Fabien C-P. Massabuau ,
Sneha L. Rhode ,
Matthew K. Horton ,
Thomas J. O’Hanlon ,
Andras Kovacs ,
Marcin S. Zielinski ,
Menno J. Kappers ,
Rafal E. Dunin-Borkowski  and
Rachel A. Oliver
Colin J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK. School of Engineering and Materials Science, Queen Mary University of London, London, UK.
Fabien C-P. Massabuau
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.
Sneha L. Rhode
Affiliation:
Department of Materials, Imperial College London, London, UK.
Matthew K. Horton
Affiliation:
Materials Science and Engineering, University of California Berkeley, California, USA.
Thomas J. O’Hanlon
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.
Andras Kovacs
Affiliation:
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Griinberg Institute, Forschungszentrum Julich GmbH, Julich, Germany.
Marcin S. Zielinski
Affiliation:
Attolight AG, EPFL Innovation Park, Lausanne, Switzerland.
Menno J. Kappers
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.
Rafal E. Dunin-Borkowski
Affiliation:
Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Griinberg Institute, Forschungszentrum Julich GmbH, Julich, Germany.
Rachel A. Oliver
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, UK.

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 4 - 5
Copyright
© Microscopy Society of America 2018 

References

[1] Hashimoto, H, et al Japanese. J. Appl. Phys. 10 1971 1115.Google Scholar
[2] Hashimoto, H, et al, J. Phys. Soc. Japan 42 1977 1073.Google Scholar
[3] Hashimoto, H Uyeda, R Acta Cryst 10 1957 143.Google Scholar
[4] Narukawa, Y, et al, J. Phys. D: Appl. Phys 43 2010 354002.Google Scholar
[5] Kneissl, M Rass, J III-Nitride Ultraviolet Emitters 2016 Springer Switzerland.Google Scholar
[6] Oliver, R A, et al, J. Phys. D: Appl. Phys 43 2010 354003.Google Scholar
[7] Kneissl, M, et al, Semicond. Sci. Technol. 26 2011 014036.Google Scholar
[8] Hirsch, P B, et al, Philos. Mag. 93 2013 3925.Google Scholar
[9] Rhode, S, et al, J. Appl. Phys. 119 2016 105301.Google Scholar
[10] Sridhara Rao, D V, et al, XV International Workshop on Physics of Semiconductor Devices (IWPSD) 2009 264–267.Google Scholar
[11] Massabuau, F C-P, et al, Nano Lett. 17 2017 4846–4852.Google Scholar
[12] Massabuau, F C-P, et al, J. Appl. Phys. 121 2017 013104.Google Scholar
[13] The authors acknowledge funding from the European Research Council, Grant 279361 (MACONS), the EU Grant 312483 (ESTEEM2), an ERC Starting Grant 307636 (SCOPE), the Lindemann Trust Fellowship and the EPSRC Grant EP/M010589/1 (Beyond Blue: New Horizons in Nitrides).Google Scholar