Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-24T01:07:53.087Z Has data issue: false hasContentIssue false
  • English
  • Français

Application of Lattice Strain Analysis of Semiconductor Device by Nano-beam Diffraction Using the 300 kV Cold-FE TEM

Published online by Cambridge University Press:  26 July 2009

T Sato ,
H Matsumoto ,
M Konno ,
M Fukui ,
I Nagaoki  and
Y Taniguchi
T Sato
Affiliation:
Hitachi High-Technologies Corp Japan
H Matsumoto
Affiliation:
Hitachi High-Technologies Corp Japan
M Konno
Affiliation:
Hitachi High-Technologies Corp Japan
M Fukui
Affiliation:
Hitachi High-Technologies Corp Japan
I Nagaoki
Affiliation:
Hitachi High-Technologies Corp Japan
Y Taniguchi
Affiliation:
Hitachi High-Technologies Corp Japan

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Type
Abstract
Information
Microscopy and Microanalysis , Volume 15 , Supplement S2 , July 2009 , pp. 114 - 115
Copyright
Copyright © Microscopy Society of America 2009