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Antimony Delta Doping by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

Published online by Cambridge University Press:  02 July 2020

R.R. Vanfleet ,
D. Muller ,
H.-J. Gossmann  and
J. Silcox
R.R. Vanfleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
D. Muller
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
H.-J. Gossmann
Affiliation:
Bell Laboratories, Lucent Technologies, Murray Hill, NJ07974
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
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Extract

MBE techniques allow the fabrication of exceptionally sharp compositional changes such as delta doped layers in semiconductors. Producing these spatially confined doped layers is critical to many innovative device designs. The spatial confinement of these delta doped structures can be less than the measurement resolution of the currently standard SIMS and RBS techniques. This allows only the upper limits on the layer width to be measured. These SIMS and RBS methods are also inadequate for the two dimensional information desired for future device design and development. More recently developed techniques such as Scanning Capacitance Microscopy and spreading resistance measurement give two dimensional information but have similar spatial resolution issues. The Z-contrast nature of Annular Dark Field (ADF) imaging with the complimentary technique of Electron Energy Loss Spectroscopy (EELS) in the Scanning Transmission Electron Microscope (STEM) shows promise for two dimensional dopant profiling with spatial resolution on the atomic scale.

Type
Compositional Imaging and Spectroscopy
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 614 - 615
Copyright
Copyright © Microscopy Society of America

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References

1Gossmann, H.-J., and Schubert, E.F., Critical Reviews in Solid State and Mat. Sci., 18(1993)1.CrossRefGoogle Scholar
2National Technology Roadmap for Semiconductors (NTRS97), Semiconductor Industry Association, San Jose, Ca (Dec. 1997).Google Scholar
3 Support and helpful discussions with Earl, Kirkland and Mick, Thomas are gratefully acknowledged. This work was supported by Air Force grant # F49620-95-1-0427. The Cornell STEM was acquired through the NSF (grant # DMR-8314255) and is operated by the Cornell Center for Materials Research (NSF grant # DMR-9632275).Google Scholar