Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Yankovich, A. B.
Kvit, A. V.
Li, X.
Zhang, F.
Avrutin, V.
Liu, H. Y.
Izyumskaya, N.
Özgür, Ü.
Morkoç, H.
and
Voyles, P. M.
2012.
Hexagonal-based pyramid void defects in GaN and InGaN.
Journal of Applied Physics,
Vol. 111,
Issue. 2,
Han, Lihong
Zou, Yuanyuan
Jia, Baonan
Guan, Xiaoning
Zhao, Huiyan
Hu, Yingshi
Zhang, Xinhui
and
Lu, Pengfei
2022.
Atomic and electronic properties of different types of SiC/SiO2 interfaces: First-principles calculations.
Surfaces and Interfaces,
Vol. 33,
Issue. ,
p.
102273.