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Annealing Induced Dissipation of Residual Trapped Charge in Focused Ion Beam Processed Wide Band Gap Materials for Device Applications.

Published online by Cambridge University Press:  31 July 2006

MA Stevens-Kalceff
Affiliation:
University of New South Wales
P Gowlett
Affiliation:
University of New South Wales

Extract

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Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Type
Abstract
Copyright
© 2006 Microscopy Society of America