Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-26T14:44:30.907Z Has data issue: false hasContentIssue false

Adjustment to the Light Element Areal Concentration Calculation for Neutron Depth Profiles

Published online by Cambridge University Press:  30 July 2021

Jamie Weaver
Affiliation:
NIST, Material Measurement Laboratory, United States
Anna Job
Affiliation:
National Institute of Standards and Technology, United States

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Many Detectors Make Lights Work: Advances in Microanalysis of Light Elements in Synthetic and Natural Materials
Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

References

Downing, R.G. Neutron Depth Profiling Chambers, Reactions of Interest. [Web page] 2018 Oct 24, 2018, 9:51 AM [cited 2018 Nov. 5]; Available from: https://sites.google.com/site/nistndp/home.Google Scholar
Lamaze, G.P., et al. , Neutron depth profiling with the new NIST cold neutron source. Surface and Interface Analysis: An International Journal devoted to the development and application of techniques for the analysis of surfaces, interfaces and thin films, 1997. 25(3): p. 217-220.Google Scholar
Biersack, J., et al. , The use of neutron induced reactions for light element profiling and lattice localization. Nuclear instruments and Methods, 1978. 149(1-3): p. 93-97.CrossRefGoogle Scholar
Nagpure, S.C., et al. , Neutron depth profiling technique for studying aging in Li-ion batteries. Electrochimica Acta, 2011. 56(13): p. 4735-4743.CrossRefGoogle Scholar
Downing, R., et al. , The measurement of boron at silicon wafer surfaces by neutron depth profiling. MRS Online Proceedings Library Archive, 1989. 166.CrossRefGoogle Scholar
Gilliam, S., et al. , Retention and surface blistering of helium irradiated tungsten as a first wall material. Journal of nuclear materials, 2005. 347(3): p. 289-297.CrossRefGoogle Scholar
Nitta, N., et al. , Li-ion battery materials: present and future. Materials today, 2015. 18(5): p. 252-264.Google Scholar
Nebel, C.E., From gemstone to semiconductor. Nature Materials, 2003. 2(7): p. 431-432.CrossRefGoogle Scholar
Ziegler, J., SRIM/TRIM code. 2008.Google Scholar
Vandervorst, W., Shepherd, F., and Downing, R., High resolution SIMS and neutron depth profiling of boron through oxide–silicon interfaces. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985. 3(3): p. 1318-1321.CrossRefGoogle Scholar
Ziegler, J., Biersack, J., and Ziegler, M., SRIM: The Stopping and Range of Ions in Matter. 5 ed. 2015, Chester, MD: SRIM Co.Google Scholar
Chen-Mayer, H., et al. , Two aspects of thin film analysis: boron profile and scattering length density profile. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003. 505(1-2): p. 531-535.CrossRefGoogle Scholar