Accurate Quantitative EDS Mapping at High Count Rates with a Large Area Silicon Drift Detector

CL Collins; J Holland; SR Burgess; P Statham; N Rowlands

doi:10.1017/S1431927609093921

Accurate Quantitative EDS Mapping at High Count Rates with a Large Area Silicon Drift Detector

Published online by Cambridge University Press: 26 July 2009

CL Collins ,

J Holland ,

SR Burgess ,

P Statham and

N Rowlands

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CL Collins: Affiliation:
Oxford Instruments Nanoanalysis,United Kingdom
J Holland: Affiliation:
Oxford Instruments Nanoanalysis,United Kingdom
SR Burgess: Affiliation:
Oxford Instruments Nanoanalysis,United Kingdom
P Statham: Affiliation:
Oxford Instruments Nanoanalysis,United Kingdom
N Rowlands: Affiliation:
Oxford Instruments Inc

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Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Type: Abstract
Information: Microscopy and Microanalysis , Volume 15 , Supplement S2 , July 2009 , pp. 230 - 231

DOI: https://doi.org/10.1017/S1431927609093921 [Opens in a new window]

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Accurate Quantitative EDS Mapping at High Count Rates with a Large Area Silicon Drift Detector

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