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X-Ray Microanalysis of Insulators in the ESEM
Published online by Cambridge University Press: 02 July 2020
Extract
We have investigated the affect of accelerating voltage (E0), pressure (P), GSED bias (VGSED), field line geometry and specimen conductivity on the landing energy of the primary beam in an XL30 ESEM. The landing energy of the primary beam can be measured by using the Duane-Hunt cut-off energy, EDH, in EDS X-ray spectra. We present experimental evidence that the landing energy of the primary beam can be significantly altered when analyzing insulators in an ESEM. Shifts in EDH result from electric fields produced by the presence of positive ions in the ESEM chamber and electrons trapped in the bulk. No shift in EDH was observed with conductive specimens at all E0 and P. Changes in the landing energy of the primary beam can significantly effect the relative intensity of characteristic peaks in EDS spectra measured in the ESEM (Figure 1).
The magnitude and sign of the shift in EDH is determined by E0 and P for a specific insulator specimen and stage geometry.
- Type
- Working with ESEM and Other Variable Pressure Systems
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 786 - 787
- Copyright
- Copyright © Microscopy Society of America
References
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