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Texture and Grain Boundaries in Epitaxial Oxide Multilayers, Including Superconductors, on Biaxially Textured Metal Substrates

Published online by Cambridge University Press:  02 July 2020

A. Goyal
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
E. D. Specht
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
D. P. Norton
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
M. Paranthaman
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
F. A. List
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
C. Park
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
D. K. Christen
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
D. M. Kroeger
Affiliation:
Oak Ridge National Laboratory, PO Box 2008, MS 6116, Oak Ridge, TN37831-6116.
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Extract

A new technique, referred to as rolling-assisted-biaxially-textured-substrates (RABiTS) has recently been proposed by Goyal et al., to fabricate long-range, biaxially textured substrates with suitable metal/ceramic surfaces for epitaxial growth of electronic devices [1]. Using standard thermomechanical processing, long lengths of flexible, biaxially oriented substrates with smooth surfaces (rms∼50nm) are obtained [1]. Epitaxial metal and/or oxide layers which can serve both as a chemical as well as a structural buffer are deposited on the biaxially textured metal. The metal with a suitable set of epitaxial, multi-layers comprises the substrate which is expected to have many potential applications, including superconductivity, photovoltaics and ferroelectrics [1].

When high temperature superconductors are deposited on a set of epitaxial multilayers on biaxially textured RABiT substrates, extremely high critical current densities, approaching 106 A/cm2 at 77K have been obtained [2].

Type
Materials Science Applications of Microdiffraction Methods in the SEM
Copyright
Copyright © Microscopy Society of America 1997

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References

Goyal, A.et al., Patent pending; Goyal, A.et al., Appl. Phys. Lett., 69 (1996) 1795.10.1063/1.117489CrossRefGoogle Scholar
Norton, D. P.et al., Science, 274 (1996) 755; Goyal, A.et al., Proc. of ISS’96, Sapporo, Oct.21-24, Japan.Google Scholar