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Structure and Chemistry across Interfaces at Nanoscale of a Ge Quantum Well Embedded within Rare Earth Oxide Layers

Published online by Cambridge University Press:  24 June 2011

Tanmay Das  and
Somnath Bhattacharyya
Tanmay Das
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
Somnath Bhattacharyya*
Affiliation:
Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
*
Corresponding author. E-mail: [email protected]
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Abstract

Structure and chemistry across the rare earth oxide-Ge interfaces of a Gd2O3-Ge-Gd2O3 heterostructure grown on p-Si (111) substrate using encapsulated solid phase epitaxy method have been studied at nanoscale using various transmission electron microscopy methods. The structure across both the interfaces was investigated using reconstructed phase and amplitude at exit plane. Chemistry across the interfaces was explored using elemental mapping, high-angle annular dark-field imaging, electron energy loss spectroscopy, and energy dispersive X-ray spectrometry. Results demonstrate the structural and chemical abruptness of both the interfaces, which is most essential to maintain the desired quantum barrier structure.

Keywords

TEMquantum wellexit face wave reconstructionEELSSTEMelemental mapEDXS
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 17 , Issue 5 , October 2011 , pp. 759 - 765
Copyright
Copyright © Microscopy Society of America 2011

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