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A Stem Study Of A Germanium Island-Silicon Interface

Published online by Cambridge University Press:  02 July 2020

R.R. Vanfleet ,
D.P. Basile ,
T.I. Kamins ,
J. Silcox  and
R. Stanley Williams
R.R. Vanfleet
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
D.P. Basile
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA94303
T.I. Kamins
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA94303
J. Silcox
Affiliation:
School of Applied and Engineering Physics, Cornell University, Ithaca, NY14853
R. Stanley Williams
Affiliation:
Hewlett-Packard Laboratories, Palo Alto, CA94303
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Extract

Growth of germanium or silicon-germanium on silicon 100 surfaces produces pyramid shaped islands after several monolayers of coverage. With further deposition, these islands will continue to grow until they reach a critical volume where a transition to a dome shape occurs. The critical surface coverage for island formation and the critical volume for the pyramid to dome transition depend upon the silicon to germanium ratio or degree of mismatch between the deposited material and the silicon substrate. Strain plays a dominant role in the shape transitions. Annealing studies have shown that the pyramid to dome transition.is reversible and is likely due to strain reduction related to interdiffusion. Annealing results in island growth, a decrease in the number of islands, and interdiffusion of the silicon and germanium. The interdiffusion relieves the strain and shifts the critical volume to a value exceeding the current volume of the dome shaped island thereby driving the transition back to pyramidal shape.

Type
Atomic Structure And Microchemistry Of Interfaces
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 126 - 127
Copyright
Copyright © Microscopy Society of America

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