Spectrum imaging, where a full spectrum is acquired at each pixel in a two-dimensional array, provides a new paradigm for materials characterization that combines the advantages of traditional paradigms for imaging and analysis in electron optical characterization. Traditionally, electron optical imaging (e.g., secondary electron imaging of electron-opaque or bright-field imaging of electron-transparent specimens) emphasizes contrast production among distinct features of the microstructure. An excellent survey of the specimen microstructure is achieved - many pixels are acquired - but typically no quantitative analysis of image intensities is performed. In contrast, electron optical analysis techniques traditionally concentrate on quantitative elemental analysis (e.g., electron probe microanalysis), or at least comprehensive qualitative analysis through full spectrum acquisition (e.g., energy-dispersive X-ray or electron energy-loss spectrometry). However, these analyses are typically performed at only a few locations on the specimen, which are pre-selected on the basis of the image contrast generated as described above.