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solid-state reactions in the presence of an electric field

Published online by Cambridge University Press:  02 July 2020

Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN55455
C.Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, MN55455
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Extract

It is well known that diffusion in ionic materials occurs primarily by the movement of charged species. Therefore, an electric field should provide a very powerful driving force for mass transport. In the present study, solid-state reactions, in the presence of an electric field, have been carried out between thin films of In2O3 and bulk monocrystalline MgO ﹛001﹜. In solid-state reactions of this type, reaction rates and interfacial stability are affected by the transport properties of the reacting ions. by applying an electric field across the sample, at elevated temperatures, the reaction rates and interfaces are affected as a result of ionic conductivity. Through the use of electron microscopy techniques the reaction kinetics and interface morphology have been investigated, in this spinel forming system, to gain a better understanding of the influence of an electric field on interface morphology and solid-state reactions.

The reaction couples used in this study were produced by means of pulsed-laser deposition (PLD).

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Copyright
Copyright © Microscopy Society of America 1997

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References

Martinelli, J. R., Sonder, E., Weeks, R. A. and Zuhr, R. A., Physical Review B 32[10]( 1985)6756.10.1103/PhysRevB.32.6756CrossRefGoogle Scholar
Schmalzried, H., Chemical Kinetics of Solids, New York:VCH (1995)10.1002/9783527615537CrossRefGoogle Scholar
Johnson, M. T., Schmalzried, H. and Carter, C. B., Solid State Ionics submitted(1996)Google Scholar
The authors wish to acknowledge the Center for Interfacial Engineering(CIE), an NSF Engineering Research Center for financial support. The authors also thank Stan Erlandsen for access to the Hitachi S-900 and Chris Frethem for technical assistance.Google Scholar