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Secondary Electron Energy Contrast of Localized Buried Charge in Metal–Insulator–Silicon Structures

Published online by Cambridge University Press:  02 October 2018

Avinash Srinivasan Open the ORCID record for Avinash Srinivasan [Opens in a new window] ,
Weiding Han Open the ORCID record for Weiding Han [Opens in a new window]  and
Anjam Khursheed Open the ORCID record for Anjam Khursheed [Opens in a new window]
Avinash Srinivasan
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
Weiding Han
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
Anjam Khursheed*
Affiliation:
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
*
Author for correspondence: Anjam Khursheed, E-mail: [email protected]
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Abstract

This paper presents a new method for creating and monitoring controlled localized negatively charged regions inside insulators with a scanning electron microscope (SEM). A localized buried charged region is created and observed close to the point where a high voltage primary beam (10 kV) strikes a metal–insulator–silicon specimen. The amount of buried charge within the insulator at any given moment can be dynamically monitored by detecting the appearance of a second peak in the secondary electron (SE) energy spectrum. SE energy spectral signals were obtained through the use of a compact high signal-to-noise energy analyzer attachment that was fitted on to the SEM specimen stage. An electrostatic model, together with Monte Carlo simulations, is presented to explain how the SE charge contrast effect functions. This model is then experimentally confirmed by using the SE energy spectral signal induced by a gallium ion beam inside a dual focused ion beam-SEM instrument.

Keywords

scanning electron microscopetoroidal analyzermetal–insulator–semiconductorsecondary electronsburied charge
Type
Materials Science Applications
Information
Microscopy and Microanalysis , Volume 24 , Issue 5 , October 2018 , pp. 453 - 460
Copyright
© Microscopy Society of America 2018 

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