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Recent Developments in Failure Analysis in an Ultra thin Film Evaluation System
Published online by Cambridge University Press: 02 July 2020
Extract
The increased demand in the microelectronics industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy(TEM). However, in contrast to scanning electron microscopes(SEM), the number of TEM units in the microelectronics industry is still limited. This is because TEM operation and TEM specimen preparation are rather complicated and the results dependent upon operator experience.
A innovative solution using a dedicated ultra thin film evaluation system(HD-2000) based upon a 200kV cold field emission scanning transmission electron microscopy(STEM) technique has been developed[1]. The system has STEM image resolution of 0.24nm and 0.3nm spatial resolution for elemental analysis using energy dispersive X-ray(EDX) spectroscopy with 0.3sr collection solid angle. The system therefore allows materials characterization to be performed at atomic resolution. Another advantage of the system is the ease of use due to newly developed PC-SEM operation software.
- Type
- The Theory and Practice of Scanning Transmission Electron Microscopy
- Information
- Microscopy and Microanalysis , Volume 6 , Issue S2: Proceedings: Microscopy & Microanalysis 2000, Microscopy Society of America 58th Annual Meeting, Microbeam Analysis Society 34th Annual Meeting, Microscopical Society of Canada/Societe de Microscopie de Canada 27th Annual Meeting, Philadelphia, Pennsylvania August 13-17, 2000 , August 2000 , pp. 136 - 137
- Copyright
- Copyright © Microscopy Society of America