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Quantitative Determination of How Growth Conditions Affect the 3D Composition of InGaAs Nanowires

Published online by Cambridge University Press:  18 February 2019

Jiangtao Qu Open the ORCID record for Jiangtao Qu [Opens in a new window] ,
Hansheng Chen ,
Mansoor Khan ,
Fan Yun ,
Xiangyuan Cui ,
Simon P. Ringer ,
Julie M. Cairney  and
Rongkun Zheng
Jiangtao Qu
Affiliation:
School of Physics, Camperdown, New South Wales, Australia The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, NSW 2006, Australia
Hansheng Chen
Affiliation:
School of Physics, Camperdown, New South Wales, Australia The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, NSW 2006, Australia
Mansoor Khan
Affiliation:
School of Physics, Camperdown, New South Wales, Australia The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, NSW 2006, Australia
Fan Yun
Affiliation:
School of Physics, Camperdown, New South Wales, Australia The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, NSW 2006, Australia
Xiangyuan Cui
Affiliation:
Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney, 2006 NSW, Australia
Simon P. Ringer
Affiliation:
Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney, 2006 NSW, Australia
Julie M. Cairney
Affiliation:
Aerospace, Mechanical and Mechatronic Engineering, the University of Sydney, 2006 NSW, Australia
Rongkun Zheng*
Affiliation:
School of Physics, Camperdown, New South Wales, Australia The Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, NSW 2006, Australia
*
*Author for correspondence: Rongkun Zheng, E-mail: [email protected]
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Abstract

Covering a broad optical spectrum, ternary InxGa1−xAs nanowires, grown by bottom-up methods, have been receiving increasing attention due to the tunability of the bandgap via In composition modulation. However, inadequate knowledge about the correlation between growth and properties restricts our ability to take advantage of this phenomenon for optoelectronic applications. Here, three different InGaAs nanowires were grown under different experimental conditions and atom probe tomography was used to quantify their composition, allowing the direct observation of the nanowire composition associated with the different growth conditions.

Keywords

atom probe tomographyAu catalystcore-shell structureepitaxy growthInGaAs nanowires
Type
Materials Science: Non-Metals
Information
Microscopy and Microanalysis , Volume 25 , Special Issue 2: Atom Probe Tomography and Microscopy APT&M 2018 , April 2019 , pp. 524 - 531
Copyright
Copyright © Microscopy Society of America 2019 

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