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Quantitative Aspects of PLAD Sidewall Doping Characterization by SIMS and APT

Published online by Cambridge University Press:  14 November 2018

Dimitry Kouzminov ,
James Cournoyer ,
Somchintana Norasetthekul ,
Harish Muthuraman  and
Qi Gao
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Abstract

Application of atom probe tomography (APT) and 1.5D secondary ion mass spectrometry (SIMS) as complimentary techniques to study fin sidewall doping by plasma implantation (PLAD) is the focus of this paper. Unlike planar transistors, characterization of 3D devices both by SIMS and APT requires sample preparation via trench backfill with α-Si, or other material, via chemical vapor deposition or atomic layer deposition process due to high aspect ratio of test structures. Certain artifacts with adverse impacts on quantitative results encountered in this study are discussed.

Keywords

PLADAPTSIMSdopant
Type
Materials Science: Non-Metals
Information
Microscopy and Microanalysis , Volume 25 , Special Issue 2: Atom Probe Tomography and Microscopy APT&M 2018 , April 2019 , pp. 511 - 516
Copyright
Copyright © Microscopy Society of America 2018 

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