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Mitigating Curtaining Artifacts During Ga FIB TEM Lamella Preparation of a 14 nm FinFET Device

Published online by Cambridge University Press:  20 March 2017

Andrey Denisyuk ,
Tomáš Hrnčíř ,
Jozef Vincenc Oboňa ,
Sharang ,
Martin Petrenec  and
Jan Michalička
Andrey Denisyuk*
Affiliation:
TESCAN ORSAY HOLDING, Libušina třída 21, 62300 Brno, Czech Republic
Tomáš Hrnčíř
Affiliation:
TESCAN Brno, Libušina třída 1, 62300 Brno, Czech Republic
Jozef Vincenc Oboňa
Affiliation:
TESCAN ORSAY HOLDING, Libušina třída 21, 62300 Brno, Czech Republic
Sharang
Affiliation:
TESCAN Brno, Libušina třída 1, 62300 Brno, Czech Republic
Martin Petrenec
Affiliation:
TESCAN Brno, Libušina třída 1, 62300 Brno, Czech Republic
Jan Michalička
Affiliation:
TESCAN ORSAY HOLDING, Libušina třída 21, 62300 Brno, Czech Republic
*
*Corresponding author. [email protected]
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Abstract

We report on the mitigation of curtaining artifacts during transmission electron microscopy (TEM) lamella preparation by means of a modified ion beam milling approach, which involves altering the incident angle of the Ga ions by rocking of the sample on a special stage. We applied this technique to TEM sample preparation of a state-of-the-art integrated circuit based on a 14-nm technology node. Site-specific lamellae with a thickness <15 nm were prepared by top-down Ga focused ion beam polishing through upper metal contacts. The lamellae were analyzed by means of high-resolution TEM, which showed a clear transistor structure and confirmed minimal curtaining artifacts. The results are compared with a standard inverted thinning preparation technique.

Keywords

TEM samplelamellaintegrated circuitFinFET device
Type
Materials Science Applications
Information
Microscopy and Microanalysis , Volume 23 , Issue 3 , June 2017 , pp. 484 - 490
Copyright
© Microscopy Society of America 2017 

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References

Alvis, R., Blackwood, J., Lee, S.-H. & Bray, M. (2012). High-throughput, site-specific sample prep of ultra-thin TEM lamella for process metrology and failure analysis. In ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, Phoenix, AZ, USA, November 11–15, 2012, pp. 391–398. Materials Park, OH: ASM International.Google Scholar
Buxbaum, A., Schampers, R. & Bolt, J. (2009). Backside TEM sample preparation with the multi-loader flip-stage. Microsc Microanal 15(S2), 334–335.Google Scholar
Clarke, J.J. (2015). A novel approach to TEM preparation with a (7-axis stage) triple-beam FIB-SEM system. Proc SPIE 9636, 963607.Google Scholar
Gazda, J., Duarte, J. & Daby-Merrill, F. (2010). Twice flipped – avoiding milling curtains in FIB prepared TEM specimens of nano-electronics devices. Microsc Microanal 16(S2), 230–231.Google Scholar
Giannuzzi, L.A. (2012a). Routine backside FIB milling with EXpressLO™. In ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis, Phoenix, AZ, USA, November 11–15, 2012, pp. 388–390. Materials Park, OH: ASM International.CrossRefGoogle Scholar
Giannuzzi, L.A. (2012b). EXpressLO™ for fast and versatile FIB specimen preparation. Microsc Microanal 18(S2), 632–633.Google Scholar
Giannuzzi, L.A. & Stevie, F.A. (2005). Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice. New York, NY: Springer Science & Business Media.CrossRefGoogle Scholar
Giannuzzi, L.A., Van Leer, B. & Ringnalda, J. (2007). Evidence for a critical amorphisation thickness limit of Ga+ion bombardment in Si. Microsc Microanal 13(S2), 1516–1517.Google Scholar
Hrnčíř, T., Dluhoš, J., Hladík, L., Moyal, E., Teshima, J. & Kopeček, J. (2014). Advances in FIB-SEM analysis of TSV and Solder Bumps – Approaching higher precision, throughput and comprehensiveness. In ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, Houston, TX, USA, November 9–13, 2014, pp. 136–142. Materials Park, OH: ASM International.Google Scholar
Hrnčíř, T., Yap, H.H., Moyal, E. & Teshima, J. (2016). Improvement of top-down delayering techniques on advanced technology nodes. In IPFA 2016 Conference Proceedings, Marina Bay Sands, Singapore, July 18--21, 2016, pp. 81–85. Singapore: IEEE.Google Scholar
Lechner, L., Biskupek, J. & Kaiser, U. (2012). Improved focused ion beam target preparation of (S)TEM specimen – A method for obtaining ultrathin lamellae. Microsc Microanal 18(2), 379–384.Google Scholar
Luo, J.-Sh. & Lee, H.T. (2014). To eliminate curtain effect of FIB TEM samples by a combination of sample dicing and backside milling. In ISTFA 2014: Conference Proceedings from the 40th International Symposium for Testing and Failure Analysis, Houston, TX, USA, November 9--13, 2014, pp. 400–405. Materials Park, OH: ASM International.Google Scholar
Malis, T., Cheng, S.C. & Egerton, R.F. (1988). EELS log-ratio technique for specimen-thickness measurement in the TEM. J Electron Microsc Tech 8(2), 193–200.Google Scholar
Oboňa, J.V., Hrnčíř, T., Sharang, Šikula, M. & Denisyuk, A. (2016). Xe plasma FIB delayering of IC based on 14 nm node technology. Microsc Microanal 22(S3), 56–57.Google Scholar
Schwarz, S.M., Kempshall, B.W., Giannuzzi, L.A. & McCartney, M.R. (2003). Avoiding the curtaining effect: Backside milling by FIB INLO. Microsc Microanal 9(S2), 116–117.Google Scholar
Sung, Ch.Sh., Lee, H.T. & Luo, J.Sh. (2015). TEM sample preparation tricks for advanced DRAMs. In ISTFA 2015: Conference Proceedings from the 41st International Symposium for Testing and Failure Analysis, Portland, OR, USA, November 1--5, 2015, pp. 323–327. Materials Park, OH: ASM International.Google Scholar
Ugurlu, O., Strauss, M., Dutrow, G., Blackwood, J., Routh, B. Jr., Senowitz, C., Plachinda, P. & Alvis, R. (2013). High-volume process monitoring of FEOL 22nm FinFET structures using an automated STEM. Proc SPIE 8681, 868107.Google Scholar