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Misfit relaxation in SrTiO3/SrRuO3 bilayer films on LaA1O3(100) substrates
Published online by Cambridge University Press: 02 July 2020
Abstract
Besides perfect dislocations, partial dislocations were proposed as effective means for misfit relaxation in the heretostructure system [1]. The microstructure of SrRuO3 films on SrTiO3 and LaA1O3 substrates have been studied. While misfit dislocations could be hardly found at the SrTiO3/SrRuO3 interface [2], high density of defects was observed in the SrRuO3/LaA1O3 interfaces [3]. in this paper, we report the high-resolution electron microscopy study of the SrTiO3/SrRuO3 bilayer films on (100) LaA1O3 substrates. The emphasis is focused on the means of misfit relaxation at the two interfaces.
Figure 1(a) is a low magnification cross-sectional image of a two-layer SrTiO3/SrRuO3 film on LaA1O3 taken along the [110] direction of the substrate. A high density of defects were observed along the SrRuO3/LaA1O3 interface. Figure 1(b) is a quarter of a superposed electron diffraction pattern (EDP) from the SrTiO3/SrRuO3 interface area, while fig. 1(c) is from the SrRuO3/LaA1O3 interface area.
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- Thin Films & Coatings
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- Copyright © Microscopy Society of America 2001