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Lighting With GaN: How Can HREM Help To Understand The Iii-Nitride System?

Published online by Cambridge University Press:  02 July 2020

C. Kisielowski ,
E.C. Nelson  and
C. Song
C. Kisielowski
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA94720/, USA
E.C. Nelson
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA94720/, USA
C. Song
Affiliation:
National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, CA94720/, USA
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Extract

Nowadays, High Resolution Electron Microscopes are capable to resolve structures on a scale below 100 pm. They can be equipped for Electron Holography in order to detect electric / magnetic fields and for chemical analyses (Electron Energy Loss Spectroscopy & Energy Dispersed X-ray's) that can be performed with a lateral resolution of 0.5 to 1 nm [1]. With the aid of computer sciences it became also possible to quantify local strain. We utilize Philips CM200 and CM300 field emission instruments with attached image filters, the JEOL Atomic Resolution Microscope and specialized software [2] to perform these tasks. On the other hand, a recent highlight in materials sciences is the development a GaN technology that is driven by a fast trial and error approach and aims to revolutionize lighting [3]. It was unavoidable that basic materials properties of the nano-structured thin films are barely understood because of the rapid progress [4].

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 730 - 731
Copyright
Copyright © Microscopy Society of America

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References

[1] e.g. Williams, D.B., Carter, C.B., “Transmission Electron Microscopy” Plenum Press, New York, 1996CrossRefGoogle Scholar

[2] Kisielowski, C., Schmidt, O., Yang, J., Mat. Res. Soc. Proc. 482, 1998, 369CrossRefGoogle Scholar

[3] Nakamura, S., Fasol, G., “The Blue Laser Diode”, Springer, Berlin 1997CrossRefGoogle Scholar

[4] Kisielowski, C.in Semiconductors and Semimetals 57, Academic Press, San Diego, 1999, 275Google Scholar