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In Situ Nitride Growth Studies by Low Energy Electron Microscopy (LEEM) and Low Energy Electron Diffraction (LEED)

Published online by Cambridge University Press:  02 July 2020

E. Bauer ,
A. Pavlovska  and
I.S.T. Tsong
E. Bauer
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287
A. Pavlovska
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287
I.S.T. Tsong
Affiliation:
Department of Physics and Astronomy, Arizona State University, Tempe, AZ, 85287
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Extract

Nitride films play an increasing role in modern electronics, for example silicon nitride as insulating layer in Si-based devices or GaN in blue light emitting diodes and lasers. For this reason they have been the subject of many ex situ electron microscopic studies. A much deeper understanding of the growth of these important materials can be obtained by in situ studies. Although these could be done by SEM, LEEM combined with LEED is much better suited because of its excellent surface sensitivity and diffraction contrast. We have in the past studied the high temperture nitridation of Si(l11) by ammonia (NH3)and the growth of GaN and A1N films on Si(l11) and 6H-SiC(0001) by depositing Ga and Al in the presence of NH3 and will report some of the results of this work for comparison with more recent work using atomic nitrogen instead of NH3.

Type
In Situ Studies in Microscopy
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 611 - 612
Copyright
Copyright © Microscopy Society of America 1997

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References

Bauer, E.et al., Phys. Rev. B51(1995)17891.10.1103/PhysRevB.51.17891CrossRefGoogle Scholar
Pavlovska, A.et al., unpublished.Google Scholar
Bauer, E., Rep. Prog. Phys. 57(1994)895; in: Handbook of Microscopy, edit, by Amelinckx, S.et al. (VCH Verlagsges., Weinheim 1997), p. 487.10.1088/0034-4885/57/9/002CrossRefGoogle Scholar
The authors gratefully acknowledge funding by the Office of Naval Research and by the National Science Foundation as well as the loan of the atomic nitrogen source by the Deutsche Forschungsgemeinschaft.Google Scholar