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In SEM a New Method of Internal Micrographic Visualization of Semiconductor Materials and IC by Crossing the Surface

Published online by Cambridge University Press:  02 July 2020

Ling Xiao ,
Zhuguan Liang ,
Yawen Li ,
Jian Wang ,
Kailin Zhou ,
Ping Li ,
Xiaohua Xu ,
E.I. Rau  and
Wenguo Hu
Ling Xiao
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Zhuguan Liang
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Yawen Li
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
Jian Wang
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Kailin Zhou
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
Ping Li
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
Xiaohua Xu
Affiliation:
Kunming Institute of Physics, Kunming, 650223, China
E.I. Rau
Affiliation:
MSU, Moscow, Russia
Wenguo Hu
Affiliation:
Department of Physics, Yunnan University, Kunming, 650091, China
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Abstract

In the paper, we firstly publish a new method of internal micrographic visualization of semiconductor and IC. The quality and reliability of the semiconductor materials (SM) and the integrated circuits (IC) have always been concerned Having a high resolution, high reliable and nondestructive detection method is the key element for their improvements.

Silicon oxide layers are used to provide the electrical insulation in the multi-structured ICs. The IC device surfaces are often protected by silicon oxide and silicon nitride layers. Therefore, these insulation layers also cover any inhomogeneity and defect located within the IC devices. It is necessary to have an examining method to detect those defects that are under the insulation layers without damaging the samples. However, the conventional scanning electron microscope (SEM) cannot be utilized to image and examine the surfaces that are positioned below the insulation layers.

Novel nondestructive and contactless method has been developed in our laboratory to obtain the internal micrograph that crosses the surface of the semiconductor material and the integrated circuit.

Type
Microscopy in the Real World: Semiconductors and Materials
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 484 - 485
Copyright
Copyright © Microscopy Society of America 2001

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References

1.BETCOL, A . B . ,BOKY, A.B. ,111. MO, X. JI,3 . PAY, H., E.B.fl K MMOB, N3 B.PAH, CEP. ËNΦ3NK., 62(1998)3599,Google Scholar
2.LEAMY, H.J.,J.APPL.PHYS.,53(1998)51CrossRefGoogle Scholar
3. This project is financed by State Science Technology Ministry of China and National Natural Science Foundation of China.Google Scholar