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High Resolution Measurements of Two Dimensional Dopant Diffusion in Silicon

Published online by Cambridge University Press:  02 July 2020

Corrado Spinella
Corrado Spinella*
Affiliation:
Istituto Nazionale di Metodologie e Tecnologie per la Microelettronica — CNR Stradale Primosole 50, I-95121, Catania(, ITALY)
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Extract

The development of the very large and ultra large scale integrated technology technology is based on the shrinkage of the lateral dimensions of semiconductors devices to a sub-micron level. Under these conditions the precise control of the total amount of dopant atoms dissolved in the silicon substrate, and of their depth and lateral distribution, become crucial requirements. One of the most promising device characterization technique is that based on transmission electron microscopy (TEM) analysis. Indeed, by means of TEM observations the device morphology can be imaged with a spatial resolution of the order of 0.1 — 0.3 nm; and, after an appropriate sample preparation method, based on selective chemical etch of doped silicon regions, the 2D dopant concentration profiles can be delineated with a resolution of the order of 5nm.

The chemical solution used for this aim consists of a mixture of both nitric and hydrofluoric acid.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 722 - 723
Copyright
Copyright © Microscopy Society of America

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References

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