Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-26T21:31:07.231Z Has data issue: false hasContentIssue false

Grain Boundary Dislocations and Stacking Defects in the 9R Phase at an Incoherent Twin Boundary in Copper

Published online by Cambridge University Press:  02 July 2020

D.L. Medlin
Affiliation:
Materials and Engineering Sciences Center, Sandia National Laboratories, Livermore, California, 94550
G.H. Campbell
Affiliation:
Chemistry and Materials Science Directorate, University of California, Lawrence Livermore National Laboratory, Livermore, California, 94550
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota, 55455
Get access

Extract

Experiment and modeling show that there is a general mode of grain boundary dissociation, common in low stacking fault energy FCC metals, that can be well understood in terms of the emission of arrays of stacking faults from the grain boundary plane. Most extensively studied of such dissociated interfaces are the Σ=3 incoherent twin boundaries. Numerous observations now exist of grain boundary dissociation at such interfaces showing a layer that is well described as a narrow, several nanometer wide slab of 9R stacked material. The 9R stacking sequence is equivalent to a close-packed stacking of FCC ﹛111﹜ planes with an intrinsic stacking fault inserted every three planes (i.e., a stacking sequence of ABC/BCA/CBA …). The width of the 9R layer is sensitive to the local stress state. Figure 1 shows results of an atomistic calculation simulating the effect of an applied shear strain parallel to the boundary.

Type
Spatially-Resolved Characterization of Interfaces in Materials
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rittner, J.D., Seidman, D.N., Merkle, K.L., Phys. Rev. B 53 (8) (1996) R42414244.CrossRefGoogle Scholar

2. Ernst, F., et al., Phys. Rev. Lett. 69(4) (1992) 620.CrossRefGoogle Scholar

3. Wolf, U., et al., Phil. Mag. A66(6) (1992) 991.CrossRefGoogle Scholar

4. Carter, C. B., et al., Materials Science Forum 207-209 (1996) 209.CrossRefGoogle Scholar

5. Campbell, G.H., et al., Scripta Materialia 35 (7) (1996) 837.CrossRefGoogle Scholar

6. This work is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science, under contracts DE-AC04-94AL85000 (Sandia) and W-7405-Eng-48 (LLNL).Google Scholar