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Gallium-Induced Milling of Silicon: A Computational Investigation of Focused Ion Beams

Published online by Cambridge University Press:  04 July 2008

Michael F. Russo ,
Mostafa Maazouz ,
Lucille A. Giannuzzi ,
Clive Chandler ,
Mark Utlaut  and
Barbara J. Garrison
Michael F. Russo*
Affiliation:
Department of Chemistry, Penn State University, 104 Chemistry Building, University Park, PA 16802, USA
Mostafa Maazouz
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Lucille A. Giannuzzi
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Clive Chandler
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Mark Utlaut
Affiliation:
Department of Physics, University of Portland, 5000 N. Willamette Boulevard, Portland, OR 97203, USA
Barbara J. Garrison
Affiliation:
Department of Chemistry, Penn State University, 104 Chemistry Building, University Park, PA 16802, USA
*
Corresponding author. E-mail: [email protected]
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Abstract

Molecular dynamics simulations are performed to model milling via a focused ion beam (FIB). The goal of this investigation is to examine the fundamental dynamics associated with the use of FIBs, as well as the phenomena that govern the early stages of trench formation during the milling process. Using a gallium beam to bombard a silicon surface, the extent of lateral damage (atomic displacement) caused by the beam at incident energies of both 2 and 30 keV is examined. These simulations indicate that the lateral damage is several times larger than the beam itself and that the mechanism responsible for the formation of a V-shaped trench is due to both the removal of surface material, and the lateral and horizontal migration of subsurface silicon atoms toward the vacuum/crater interface. The results presented here provide complementary information to experimental images of trenches created during milling with FIBs.

Keywords

molecular dynamicsFIBgalliumsilicon
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 14 , Issue 4 , August 2008 , pp. 315 - 320
Copyright
Copyright © Microscopy Society of America 2008

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References

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