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Gallium-Induced Milling of Silicon: A Computational Investigation of Focused Ion Beams

Published online by Cambridge University Press:  04 July 2008

Michael F. Russo ,
Mostafa Maazouz ,
Lucille A. Giannuzzi ,
Clive Chandler ,
Mark Utlaut  and
Barbara J. Garrison
Michael F. Russo*
Affiliation:
Department of Chemistry, Penn State University, 104 Chemistry Building, University Park, PA 16802, USA
Mostafa Maazouz
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Lucille A. Giannuzzi
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Clive Chandler
Affiliation:
FEI Company, 5350 NE Dawson Creek Drive, Hillsboro, OR 97124, USA
Mark Utlaut
Affiliation:
Department of Physics, University of Portland, 5000 N. Willamette Boulevard, Portland, OR 97203, USA
Barbara J. Garrison
Affiliation:
Department of Chemistry, Penn State University, 104 Chemistry Building, University Park, PA 16802, USA
*
Corresponding author. E-mail: [email protected]
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Abstract

Molecular dynamics simulations are performed to model milling via a focused ion beam (FIB). The goal of this investigation is to examine the fundamental dynamics associated with the use of FIBs, as well as the phenomena that govern the early stages of trench formation during the milling process. Using a gallium beam to bombard a silicon surface, the extent of lateral damage (atomic displacement) caused by the beam at incident energies of both 2 and 30 keV is examined. These simulations indicate that the lateral damage is several times larger than the beam itself and that the mechanism responsible for the formation of a V-shaped trench is due to both the removal of surface material, and the lateral and horizontal migration of subsurface silicon atoms toward the vacuum/crater interface. The results presented here provide complementary information to experimental images of trenches created during milling with FIBs.

Keywords

molecular dynamicsFIBgalliumsilicon
Type
Materials Applications
Information
Microscopy and Microanalysis , Volume 14 , Issue 4 , August 2008 , pp. 315 - 320
Copyright
Copyright © Microscopy Society of America 2008

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References

REFERENCES

Delcorte, A. & Garrison, B.J. (2000). High yield events of molecular emission induced by kiloelectronvolt particle bombardment. J Phys Chem B 104, 6785–6800.CrossRefGoogle Scholar
Feil, H., Vanzwol, J., Dezwart, S.T., Dieleman, J. & Garrison, B.J. (1991). Experimental and molecular-dynamics study of the Ar emission mechanism during low-energy Ar + bombardment of Cu. Phys Rev B 43, 13695–13698.CrossRefGoogle ScholarPubMed
Garrison, B.J. (1992). Molecular-dynamics simulations of surface chemical-reactions. Chem Soc Rev 21, 155–162.CrossRefGoogle Scholar
Garrison, B.J. (2001). Molecular dynamics simulations, the theoretical partner to static SIMS experiments. In ToF-SIMS: Surface Analysis by Mass Spectrometry, J.C. Vickerman & D. Briggs (Eds.), pp. 223–257. Manchester, UK: Surface Spectra.Google Scholar
Giannuzzi, L.A. & Stevie, F.A. (2005). Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practices. New York: Springer.CrossRefGoogle Scholar
Haddeman, E.F.C. & Thijsse, B.J. (2003). Transient sputtering of silicon by argon studied by molecular dynamics simulations. Nucl Instrum Meth B 202, 161–167.CrossRefGoogle Scholar
Humbird, D. & Graves, D.B. (2005). Atomistic simulations of Ar+-ion-assisted etching of silicon by fluorine and chlorine. J Vac Sci Technol A 23, 31–38.CrossRefGoogle Scholar
Humbird, D., Graves, D.B., Stevens, A.A.E. & Kessels, W.M.M. (2007). Molecular dynamics simulations of Ar+ bombardment of Si with comparison to experiment. J Vac Sci Technol A 25, 1529–1533.CrossRefGoogle Scholar
Ishitani, T., Koike, H., Yaguchi, T. & Kamino, T. (1998). Implanted gallium ion concentrations of focused-ion-beam prepared cross sections. J Vac Sci Technol B 16, 1907–1913.CrossRefGoogle Scholar
Ishitani, T., Umemura, K., Ohnishi, T., Yaguchi, T. & Kamino, T. (2004). Improvements in performance of focused ion beam cross-sectioning: Aspects of ion-sample interaction. J Electron Microsc 53, 443–449.CrossRefGoogle ScholarPubMed
Krantzman, K.D., Kingsbury, D.B. & Garrison, B.J. (2007). Cluster induced chemistry at solid surfaces: Molecular dynamics simulations of keV C-60 bombardment of Si. Nucl Instrum Meth B 255, 238–241.CrossRefGoogle Scholar
Lehrer, C., Frey, L., Petersen, S. & Ryssel, H. (2001). Limitations of focused ion beam nanomachining. J Vac Sci Technol B 19, 2533–2538.CrossRefGoogle Scholar
Orloff, J., Utlaut, M. & Swanson, L. (2003). High Resolution Focused Ion Beams, FIB and Its Applications. New York: Kluwer/Plenum.CrossRefGoogle Scholar
Pellerin, J.G., Griffis, D.P. & Russell, P.E. (1990). Focused ion-beam machining of Si, GaAs, and InP. J Vac Sci Technol B 8, 1945–1950.CrossRefGoogle Scholar
Postawa, Z., Czerwinski, B., Winograd, N. & Garrison, B.J. (2005). Microscopic insights into the sputtering of thin organic films on Ag{111} induced by C-60 and Ga bombardment. J Phys Chem B 109, 11973–11979.CrossRefGoogle Scholar
Prewitt, P. & Mair, G.L.R. (1991). Focused Ion Beams from Liquid Metal Ion Sources. New York: Wiley.Google Scholar
Rubanov, S. & Munroe, P.R. (2004). FIB-induced damage in silicon. J Microsc-Oxford 214, 213–221.CrossRefGoogle ScholarPubMed
Russo, M.F. Jr., Szakal, C., Kozole, J., Winograd, N. & Garrison, B.J. (2007). Sputtering yields for C60 and Au3 bombardment of water ice as a function of incident kinetic energy. Anal Chem 79, 4493–4498.CrossRefGoogle ScholarPubMed
Ryan, K.E., Wojciechowski, I.A. & Garrison, B.J. (2007). Reaction dynamics following keV cluster bombardment. J Phys Chem C 111, 12822–12826.CrossRefGoogle Scholar
Schoolcraft, T.A. & Garrison, B.J. (1991). Initial-stages of etching of the Si(100)(2x1) surface by 3.0-Ev normal incident fluorine-atoms—A molecular-dynamics study. J Am Chem Soc 113, 8221–8228.CrossRefGoogle Scholar
Tersoff, J. (1989). Modeling solid-state chemistry—Interatomic potentials for multicomponent systems. Phys Rev B 39, 5566–5568.CrossRefGoogle ScholarPubMed
Thijsse, B.J., Klaver, T.P.C. & Haddeman, E.F.C. (2004). Molecular dynamics simulation of silicon sputtering: Sensitivity to the choice of potential. Appl Surf Sci 231–2, 29–38.CrossRefGoogle Scholar
Urbassek, H.M. (1997). Molecular-dynamics simulation of sputtering. Nucl Instrum Meth B 122, 427–441.CrossRefGoogle Scholar
Webb, R., Kerford, M., Ali, E., Dunn, M., Knowles, L., Lee, K., Mistry, J. & Whitefoot, F. (2001). Molecular dynamics simulation of the cluster-impact-induced molecular desorption process. Surf Interface Anal 31, 297–301.CrossRefGoogle Scholar
Ziegler, J.F., Biersack, J.P. & Ziegler, M.D. (2008). SRIM—The Stopping and Range of Ions in Matter. LuLu.com. [SRIM-2006, vers. 06.24, from http://www.SRIM.org.]Google Scholar