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Formation of Nickel Ferrite Films by Solid-State Reaction

Published online by Cambridge University Press:  02 July 2020

Matthew T. Johnson ,
Paul G. Kotula  and
C. Barry Carter
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE Minneapolis, MN55455
Paul G. Kotula
Affiliation:
Center for Materials Science, MS K765, Los Alamos National Laboratory, Los Alamos, NM87545
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE Minneapolis, MN55455
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Nickel ferrite (NiFe2O4) thin films are of potential interest for magnetic applications. In the present study, the production of NiFe2O4 by solid-state reaction between thin films of hematite (α-Fe2O3) and nickel oxide (NiO) on (0001) sapphire (α-Fe2O3) substrates has been examined. The NiFe2O4 thin films were prepared by two different methods. In the first case the NiFe2O4film was grown in situ in the deposition system, while in the second case the NiFe2O4 film was formed ex situ by reacting at elevated temperatures in air. These two methods of reaction lead to interesting morphological differences in the ferrite layers.

Epilayers of α-Fe2O3 followed by NiO were deposited onto (0001) α-Al2O3 by pulsed-laser deposition (PLD) in 6 mTorr O2. NiFe2O4 films were obtained by reacting the starting films in two different ways: in situ (during film growth) and ex situ.. In both cases, the α-Fe2O3 films were grown under the same conditions while those for the deposition of the NiO layers were different.

Type
Ceramics and Ceramic Composites
Information
Microscopy and Microanalysis , Volume 3 , Issue S2: Proceedings: Microscopy & Microanalysis '97, Microscopy Society of America 55th Annual Meeting, Microbeam Analysis Society 31st Annual Meeting, Histochemical Society 48th Annual Meeting, Cleveland, Ohio, August 10-14, 1997 , August 1997 , pp. 739 - 740
Copyright
Copyright © Microscopy Society of America 1997

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References

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The authors acknowledge the Center for Interfacial Engineering(CIE), an NSF Engineering Research Center for financial support. PGK acknowledges a director funded fellowship at LANL.Google Scholar