Hostname: page-component-7bb8b95d7b-w7rtg Total loading time: 0 Render date: 2024-09-30T04:18:28.502Z Has data issue: false hasContentIssue false
  • English
  • Français

Evidence for 9R-SiC?

Published online by Cambridge University Press:  02 February 2002

U. Kaiser ,
A. Chuvilin ,
V. Kyznetsov  and
Y. Butenko
U. Kaiser*
Affiliation:
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena, Germany
A. Chuvilin
Affiliation:
Boreskov Institute of Catalysis, SB RAS, Av. Lavrentieva 5, Novosibirsk 90, Russia, 630090
V. Kyznetsov
Affiliation:
Boreskov Institute of Catalysis, SB RAS, Av. Lavrentieva 5, Novosibirsk 90, Russia, 630090
Y. Butenko
Affiliation:
Boreskov Institute of Catalysis, SB RAS, Av. Lavrentieva 5, Novosibirsk 90, Russia, 630090
*
*Corresponding author
Get access

Abstract

Complementary to our first paper on the origin of threefold contrast on SiC high resolution transmission electron microscopy (HRTEM) images, we now provide an example of threefold contrast produced by a stacking layer sequence which corresponds to one unit cell of the 9R polytype.

Keywords

silicon carbideSiC polytypes9R-SiChigh resolution transmission electron microscopyhigh resolution image simulationwhiskers
Type
Research Article
Information
Microscopy and Microanalysis , Volume 7 , Issue 4 , July 2001 , pp. 368 - 369
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)