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EELS Analysis of InGaN/GaN Heterostructures Using the Ga 3d Transitions in Epsilon 2

Published online by Cambridge University Press:  01 August 2004

Ana M Sanchez ,
Mhairi H Gass ,
Adam J Papworth ,
Peter J Goodhew  and
P Ruterana
Ana M Sanchez
Affiliation:
University of Liverpool, United Kingdom
Mhairi H Gass
Affiliation:
University of Liverpool, United Kingdom
Adam J Papworth
Affiliation:
University of Liverpool, United Kingdom
Peter J Goodhew
Affiliation:
University of Liverpool, United Kingdom
P Ruterana
Affiliation:
CNRS-ENSICAEN, France
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 10 , Issue S02 , August 2004 , pp. 864 - 865
Copyright
© 2004 Microscopy Society of America

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