Hostname: page-component-586b7cd67f-dsjbd Total loading time: 0 Render date: 2024-11-20T14:33:01.915Z Has data issue: false hasContentIssue false

Digital Moiré Analysis of Interface Dislocation Structure Between S-Phase (Al2CuMg) and Al-Based Matrix

Published online by Cambridge University Press:  02 July 2020

V. Radmilovic
Affiliation:
University of Belgrade, Dept. of Physical Metallurgy, P.O. Box 494, 11001, Belgrade, Yugoslavia National Center for Electron Microscopy, UC/LBNL, Berkeley, 94720, CA, USA
S. Ratkovic
Affiliation:
University of Belgrade, Dept. of Physical Metallurgy, P.O. Box 494, 11001, Belgrade, Yugoslavia
U. Dahmen
Affiliation:
National Center for Electron Microscopy, UC/LBNL, Berkeley, 94720, CA, USA
Get access

Extract

Using the moiré technique or the related geometrical phase technique [1,2], lattice displacement fields can be derived from high resolution micrographs by comparison with an undistorted reference lattice. A moiré image gives a magnified view of the distortions in a high resolution image, whether they are due to a distortion of the crystal lattice or result from imaging artifacts. The magnification of a moiré image is determined by the choice of the reference lattice. The closer the reference lattice is to the average lattice period in a high resolution image, the larger the magnification. To first order, both rotations and extensions of the lattice are magnified by the same factor g/Δg, where Δg is the difference between the image lattice and the reference lattice [1]. When the moiré technique is applied to interfaces, care must be taken interpret only patterns from corresponding sets of lattice planes. Thus, the technique gives a good representation of the distortions around a precipitate, but the interpretation of the moiré pattern inside a precipitate or across an interface must be made with caution.

Type
Atomic Structure and Mechanisms at Interfaces in Materials
Copyright
Copyright © Microscopy Society of America 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Hetherington, C.J. and Dahmen, U., Scanning Microscopy Supplement 6, 405 (1992)Google Scholar
2.Hytch, M.J. and Dahmen, U., (1997) to be submitted to UltramicroscopyGoogle Scholar
3.Makin, M.J. and Hudson, B., Phil. Mag. 8, 447 (1963)10.1080/14786436308211145CrossRefGoogle Scholar
4.Radmilovic, V., Thomas, G., Shiflet, G.J., and Starke, E.A., Scripta Met. 23, 1141 (1989)10.1016/0036-9748(89)90315-3CrossRefGoogle Scholar
5. This work was supported by the Director, Office of Basic Energy Sciences, Materials Science Division, US Department of Energy, under contract DE-AC3-76SF00098Google Scholar