Hostname: page-component-7bb8b95d7b-495rp Total loading time: 0 Render date: 2024-09-29T07:19:47.972Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Structures in Semiconducting Resi2−x Epitaxial Thin Films

Published online by Cambridge University Press:  02 July 2020

A. Misra  and
T.E. Mitchell
A. Misra
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, NM87545;, J.E. Mahan, Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado80523.
T.E. Mitchell
Affiliation:
Materials Science and Technology Division, MS K765, Los Alamos National Laboratory, Los Alamos, NM87545;, J.E. Mahan, Department of Electrical Engineering, Colorado State University, Fort Collins, Colorado80523.
Get access

Extract

Narrow band gap semiconductors such as ReSi2-x (Eg ∽0.12 eV) are potential materials for infrared detectors [1]. Further, ReSi2-x is in thermodynamic equilibrium and has a very small lattice mismatch with Si offering the potential of developing ReSi2-x /Si heterojunction devices where the detector element and the signal processing circuitry can be integrated on one Si chip. In a previous study, strong crystallographic alignment between ReSi2-x film and (001)Si substrate was observed by ion channeling [1]. In this study, a transmission electron microscopy (TEM) study has been performed on ReSi2-x epitaxial films on (001) Si. Comparisons are made to our previous microscopy study [2] on the defect structures in bulk single crystals of ReSi2-x.

ReSi2-x films were prepared by reactive deposition epitaxy (RDE) technique by evaporating Re onto (001) Si wafer at 650 °C. A cap layer of Cr was evaporated at room temperature. A bright field (BF) TEM image of the interface in cross-section is shown in Fig. 1 with the corresponding selected area diffraction pattern (SADP) shown in Fig. 2.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 726 - 727
Copyright
Copyright © Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Mahan, J.E., Bai, G., Nicolet, M.-A., Long, R.G. and Geib, K.M., Thin Solid Films, 207, p 223 (1992).CrossRefGoogle Scholar
2.Misra, A., Chu, F. and Mitchell, T.E., Phil. Mag. A, 79, (1999), in press.CrossRefGoogle Scholar
3.Bjorketun, L.-O., Hultman, L., Ivanov, LP., Wahab, Q. and Sundgren, J.-E., J. Cryst. Growth, 182, p379 (1997).CrossRefGoogle Scholar