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Composition of Carbon Clusters in Implanted Silicon Using Atom Probe Tomography

Published online by Cambridge University Press:  21 September 2021

Paul Dumas Open the ORCID record for Paul Dumas [Opens in a new window] ,
Sebastien Duguay ,
Julien Borrel ,
Fanny Hilario  and
Didier Blavette
Paul Dumas*
Affiliation:
STMicroelectronics Crolles, Crolles, France Université de Rouen, GPM, UMR CNRS, Saint Etienne du Rouvray, France
Sebastien Duguay
Affiliation:
Université de Rouen, GPM, UMR CNRS, Saint Etienne du Rouvray, France
Julien Borrel
Affiliation:
STMicroelectronics Crolles, Crolles, France
Fanny Hilario
Affiliation:
STMicroelectronics Crolles, Crolles, France
Didier Blavette
Affiliation:
Université de Rouen, GPM, UMR CNRS, Saint Etienne du Rouvray, France
*
*Corresponding author: Paul Dumas, E-mail: [email protected]
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Abstract

Atom probe tomography was employed to observe and derive the composition of carbon clusters in implanted silicon. This value, which is of interest to the microelectronic industry when considering ion implantation defects, was estimated not to exceed 2 at%. This measurement has been done by fitting the distribution of first nearest neighbor distances between monoatomic carbon ions (C+ and C2+). Carbon quantification has been considerably improved through the detection of molecular ions, using lower electric field conditions as well as equal proportions of 12C and 13C. In these conditions and using another quantification method, we have shown that the carbon content in clusters approaches 50 at%. This result very likely indicates that clusters are nuclei of the SiC phase.

Keywords

atom probe tomographycarbonion implantationsilicon
Type
Development and Computation
Information
Microscopy and Microanalysis , Volume 28 , Issue 4 , August 2022 , pp. 994 - 997
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Copyright
Copyright © The Author(s), 2021. Published by Cambridge University Press on behalf of the Microscopy Society of America

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