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Characterization of FIB Damage in Silicon

Published online by Cambridge University Press:  02 July 2020

C.A. Urbanik ,
B.I. Prenitzer ,
L.A. Gianhuzzi ,
S.R. Brown ,
T.L. Shofner ,
B. Rossie ,
R.B. Irwin  and
F.A. Stevie
C.A. Urbanik
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL32816-2450.
B.I. Prenitzer
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL32816-2450.
L.A. Gianhuzzi
Affiliation:
Advanced Materials Processing and Analysis Center, Mechanical Materials & Aerospace Engineering, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL32816-2450.
S.R. Brown
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
T.L. Shofner
Affiliation:
The Bartech Group, 9333 S. John Young Parkway, Orlando, FL32819
B. Rossie
Affiliation:
The Bartech Group, 9333 S. John Young Parkway, Orlando, FL32819
R.B. Irwin
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
F.A. Stevie
Affiliation:
Cirent Semiconductor, 9333 S. John Young Parkway, Orlando, FL32819
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Extract

Focused ion beam (FIB) instruments are useful for high spatial resolution milling, deposition, and imaging capabilities. As a result, FIB specimen preparation techniques have been widely accepted within the semiconductor community as a means to rapidly prepare high quality, site-specific specimens for transmission electron microscopy (TEM) [1]. In spite of the excellent results that have been observed for both high resolution (HREM) and standard TEM specimen preparation applications, a degree of structural modification is inherent to FIB milled surfaces [2,3]. The magnitude of the damage region that results from Ga+ ion bombardment is dependent on the operating parameters of the FIB (e.g., beam current, beam voltage, milling time, and the use of reactive gas assisted etching).

Lattice defects occur as a consequence of FIB milling because the incident ions transfer energy to the atoms of the target material. Momentum transferred from the incident ions to the target atoms can result in the creation of point defects (e.g., vacancies, self interstitials, and interstitial and substitutional ion implantation), the generation of phonons, and plasmon excitation in the case of metal targets.

Type
Defects in Semiconductors
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 740 - 741
Copyright
Copyright © Microscopy Society of America

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References

1.Giannuzzi, et al., Mat. Res. Soc. Symp. Proc. Vol. 480, (1997), 19.CrossRefGoogle Scholar
2.Tanaka, et al., Nucl. Instr. and Meth. in Phys. Res. B, 127/128, p. 98–101 (1997)CrossRefGoogle Scholar
3.Albarede, , and Lezec, , ICEM 14, Electron Microscopy, III, p. 431 (1998).Google Scholar
4.Prenitzer, et al., in press, J. Vacuum Science and Technology.Google Scholar
5.Giannuzzi, et al., in press, J . Vacuum Science and Technology.Google Scholar
6. This work was made possible by NSF DMR #9703281, SEMATECH, DOD NDSEG fellowship contract number P-34862-RT-NDF, and the I4-UCF/Cirent PartnershipGoogle Scholar