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Characterization of Al In GaN/GaN Heterointerface by HAADF-STEM and Electron Holography

Published online by Cambridge University Press:  03 August 2008

M Takeguchi ,
H Okuno ,
Y Irokawa ,
Y Sakuma  and
K Furuya
M Takeguchi
Affiliation:
National Institute for Materials Science, Japan
H Okuno
Affiliation:
National Institute for Materials Science, Japan
Y Irokawa
Affiliation:
National Institute for Materials Science, Japan
Y Sakuma
Affiliation:
National Institute for Materials Science, Japan
K Furuya
Affiliation:
National Institute for Materials Science, Japan
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Extract

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Type
Research Article
Information
Microscopy and Microanalysis , Volume 14 , Supplement S2 , August 2008 , pp. 438 - 439
Copyright
© 2008 Microscopy Society of America

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