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Atom Probe Field Ion Microscopy of High Resistivity Materials
Published online by Cambridge University Press: 02 July 2020
Extract
Over the last 30 years, the atom probe has proved to be a powerful tool for studying nanometer-sized compositional fluctuations in a wide range of metallic alloys but has had only limited applications to semiconductors and ceramics. One of the primary reasons for this difference is the higher resistivity of semiconducting and ceramic specimens. Because of this high resistivity, the high voltage field evaporation pulse is attenuated before it reaches the apex of the specimen thereby making the pulse ineffective for field evaporation. Experiments have demonstrated that both variants of the voltagepulsed atom probe (i.e., those instruments in which the field evaporation pulse is applied directly to the specimen and those in which the negative pulse is applied to a counter electrode in front of the specimen) are equally affected. In this overview, the limits of applicability of the voltage-pulsed atom probe to high resistivity materials are examined.
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- Imaging and Analysis at the Atomic Level: 30 Years of Atom Probe Field Ion Microscopy
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- Copyright © Microscopy Society of America
References
1. Miller, M. K. et al., Atom Probe Field Ion Microscopy, Oxford, Oxford University Press (1996).Google Scholar
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3. This research was sponsored by the Division of Materials Sciences, U.S. Department of Energy, under contract DE-AC05-960R22464 with Lockheed Martin Energy Research Corp. and by an appointment to the ORNL Postdoctoral Research Associates Program administered jointly by the Oak Ridge Institute for Science and Education and ORNL. This research was conducted utilizing the Shared Research Equipment (SHaRE) User Program facilities at ORNL.Google Scholar
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