Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-26T00:11:25.876Z Has data issue: false hasContentIssue false

Application of Electron Backscatter Diffraction for Crystallographic Characterization of Tin Whiskers

Published online by Cambridge University Press:  26 July 2012

Joseph R. Michael*
Affiliation:
Sandia National Laboratories, Materials Characterization Department, P.O. Box 5800, MS 0886, Albuquerque, NM 87185-0886, USA
Bonnie B. McKenzie
Affiliation:
Sandia National Laboratories, Materials Characterization Department, P.O. Box 5800, MS 0886, Albuquerque, NM 87185-0886, USA
Donald F. Susan
Affiliation:
Sandia National Laboratories, Materials Characterization Department, P.O. Box 5800, MS 0886, Albuquerque, NM 87185-0886, USA
*
Corresponding author. E-mail: [email protected]
Get access

Abstract

Understanding the growth of whiskers or high aspect ratio features on substrates can be aided when the crystallography of the feature is known. This study has evaluated three methods that utilize electron backscatter diffraction (EBSD) for the determination of the crystallographic growth direction of an individual whisker. EBSD has traditionally been a technique applied to planar, polished samples, and thus the use of EBSD for out-of-surface features is somewhat more difficult and requires additional steps. One of the methods requires the whiskers to be removed from the substrate resulting in the loss of valuable physical growth relationships between the whisker and the substrate. The other two techniques do not suffer this disadvantage and provide the physical growth information as well as the crystallographic growth directions. The final choice of method depends on the information required. The accuracy and the advantages and disadvantages of each method are discussed.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Boettinger, W.J., Johnson, C.E., Bendersky, L.A., Moon, K.-W., Williams, M.E. & Stafford, G.R. (2005). Whisker and Hillock Formation on Sn, Sn-Cu and Sn-Pb electrodeposits. Acta Mater 53, 50335050.CrossRefGoogle Scholar
Bunge, H.-J. (1982). Texture Analysis in Materials Science, pp. 319. Boston, MA: Butterworths.CrossRefGoogle Scholar
Goldstein, J.I., Newbury, D.E., Joy, D.C., Lyman, C.E., Echlin, P., Lifshin, E., Sawyer, L. & Michael, J.R. (2003). Scanning Electron Microscopy and X-Ray Microanalysis, pp. 217220. New York: Kluwer Academic/Plenum Publishers.CrossRefGoogle Scholar
Huang, L., Wright, S., Yang, S., Shen, D., Gu, B. & Du, Y. (2004). ZnO well-faceted fibers with periodic junctions. J Phys Chem B 108, 1990119903.CrossRefGoogle Scholar
Hutchinson, B., Oliver, J., Nylen, M. & Hagstrom, J. (2004). Whisker growth from Tin coatings. Mat Sci Forum 467470, 465470.Google Scholar
Kameda, J., Inoguchi, R., Prior, D.J. & Kogure, T. (2007). Morphological analyses of minute crystals by using stereo-photogrammetric scanning electron microscopy and electron back-scattered diffraction. J Microsc 228, 358365.Google Scholar
Long, J.P., Simpkins, B.S., Rowenhurst, D.J. & Pehrsson, P.E. (2007). Far-field imaging of optical second-harmonic generation single GaN nanowires. Nano Lett 7, 831836.Google Scholar
Luborsky, F.E., Koch, E.F. & Morelock, C.R. (1963). Crystallographic orientation and oxidation of submicron whiskers of iron, iron-cobalt and cobalt. J Appl Phys 34, 29052909.CrossRefGoogle Scholar
Morris, R.B. & Bonfield, W. (1974). The crystallography of alpha-tin whiskers. Scripta Met 8, 231236.CrossRefGoogle Scholar
Motayed, A., Daydov, A.V., Vaidin, M., Levin, I., Melngailis, J., He, M. & Mohammad, S.N. (2006). Fabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition. J Appl Phys 100, 024306-1. CrossRefGoogle Scholar
Motayed, A., Vaidin, M., Daydov, A.V., Melngailis, J., He, M. & Mohammad, S.N. (2007). Diameter dependent transport properties of gallium nitride nanowire field effect transistors. Appl Phys Lett 90, 043104-1. CrossRefGoogle Scholar
Panashchenko, L. & Osterman, M. (2009). Examination of nickel underlayer as a tin whisker mitigator. Proceedings IEEE 59th Electronic Components and Technology Conference 14, 10371043.Google Scholar
Randle, V. & Davies, H. (2002). A comparison between three-dimensional and two-dimensional grain boundary plane analysis. Ultramicroscopy 90, 153162.Google Scholar
Sundaresan, S.G., Davydov, A.V., Vaudin, M.D., Levin, I., Maslar, J.E., Tian, Y-L. & Mulpuri, R. (2007). Growth of silicon carbide nanowires by a microwave heating-assisted physical vapor transport process using group VIII metal catalysts. Chem Mater 19, 55315537.CrossRefGoogle Scholar
Wang, B-B., Xie, J-J., Yuan, Q. & Zhao, Y-P. (2008). Growth mechanism and joint structure of ZnO tetrapods. J Phys D 41, 102005102011.CrossRefGoogle Scholar
Wert, J.A. & Robertson, W.M. (1982). Determination of crystallographic facet oreintatinos on fracture surfaces. Metallography 15, 367381.CrossRefGoogle Scholar
Young, C.T. & Lytton, J.L. (1972). Computer generation and identification of Kikuchi patterns. J Appl Phys 43, 14081417.CrossRefGoogle Scholar