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Ain Films Grown by Electric Field Induced Flux of al Cations

Published online by Cambridge University Press:  02 July 2020

Matthew T. Johnson ,
Zhigang Mao  and
C. Barry Carter
Matthew T. Johnson
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
Zhigang Mao
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue SE, Minneapolis, Minneapolis, MN55455
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Extract

The properties of aluminum nitride (A1N) make it an interesting material for applications in the microelectronics industry. These properties include: a large bandgap, good thermal conductivity, high-temperature stability and chemical inertness. Additionally, thin A1N films are used as buffer layers for the growth of GaN on alumina. In the present study, thin-films of A1N have been grown on (000l)-oriented α-Al2O3 through the use of an electric field. At elevated temperatures an electric field applied across a normally insulating oxide material will typically induce a flux of ions that carry current. In the case of Al2O3, since the more mobile species are the Al3+ cations, by applying an electric-field across the material, with an appropriate electrode material, a flux of 3+ cations can be induced toward the cathode surface (negative electrode).

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 638 - 639
Copyright
Copyright © Microscopy Society of America

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References

References:

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5. The authors acknowledge the research support of the 3M Harry Heltzer Chair and the Center for Interfacial Engineering, a National Science Foundation Engineering Research CenterGoogle Scholar