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Aberration-Corrected STEM: the Present and the Future

Published online by Cambridge University Press:  02 July 2020

O.L. Krivanek
Affiliation:
Nion Co., 1102 8th St., Kirkland, WA, 98033, USA
N. Dellby
Affiliation:
Nion Co., 1102 8th St., Kirkland, WA, 98033, USA
P.D. Nellist
Affiliation:
Nion Co., 1102 8th St., Kirkland, WA, 98033, USA
P.E. Batson
Affiliation:
IBM TJ Watson Research Center, Yorktown Heights, NY, 10598, USA
A.R. Lupini
Affiliation:
Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge, CB3 0HE, UK
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Abstract

Surprising as it may seem, aberration correction for the scanning transmission electron microscope (STEM) is now a practical proposition. The first-ever commercial spherical aberration corrector for a STEM was delivered by Nion to IBM Research Center in June 2000, and other deliveries have taken place since or are imminent. At the same time, the development of corrector hardware and software is still proceeding at full speed, and our understanding of what are the most important factors for the successful operation of a corrector is deepening continuously.

Fig. 1 shows two high-angle dark field (HADF) images of [110] Si obtained with the IBM VG HB501 STEM operating at 120 kV, about 2 weeks after we fitted a quadrupole-octupole corrector into it. Fig. 1(a) shows the best HADF image that could be obtained with the corrector's quadrupoles on but its octupoles off. Sample structures were captured down to about 2.5 Å detail, easily possible in a STEM with a high resolution objective lens with a spherical aberration coefficient (Cs) of 1.3 mm. Fig. 1(b) shows a HADF image obtained after the Cs-correcting octupoles were turned on and the corrector tuned up. The resolution has now improved to 1.36 Å. This is sufficient to resolve the correct separation of the closely-spaced Si columns.

Type
TEM Instrument Development (Organized by D. Smith and L. Allard)
Copyright
Copyright © Microscopy Society of America 2001

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References

1. Dellby, N.et al., J. Electron Microscopy, to be published (2001).Google Scholar