3D Analytical TEM Approach to Effectively Characterize 3D-FinFET Device Features in Semiconductor Wafer-foundries

Wayne Zhao; Stephen Mongeon; Bianzhu Fu; Esther (PY) Chen; Daniel Flatoff; Nicolas LaManque; Jeremy Russell

doi:10.1017/S1431927614003535

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References

[1] Zhao, W., et al. Proc. 38^th International Symposium for Testing and Failure Analysis ((2012), pp. 347–355.Google Scholar

[2] Zhao, W., et al. Microscopy & Microanalysis, Vol. 19 (Supplement 2), ((2013), pp.902–3.Google Scholar

[3] Zhao, W. Microscopy & Microanalysis, Vol. 12 (Supplement 2), ((2006), pp.1030–31CD.Google Scholar

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Crossref Citations

This article has been cited by the following publications. This list is generated based on data provided by Crossref.

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Fu, B. Gribelyuk, M. Dumas, L. Fang, C. LaManque, N. Hodgkins, L. and Chen, E. 2016. The Combination of STEM Tomography and STEM/EDS Analysis of NiSi Formation Related Defects in Semiconductor Wafer-foundries. Microscopy and Microanalysis, Vol. 22, Issue. S3, p. 326.

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Zhao, Wayne Wang, Yun-yu and Fu, Bianzhu 2017. An Application of High-Resolution Dual-Lens Dark-Field Electron Holography in Strain Analysis for Nanometer Semiconductor Device in Wafer-foundries. Microscopy and Microanalysis, Vol. 23, Issue. S1, p. 1490.

Zhao, Wayne Fu, Bianzhu Wei, Yong and Brooks, Irene 2017. A Novel Strategy to Effectively Characterize FinFET Device by Multidirectional Comprehensive Analytical TEM in Semiconductor Wafer-foundries. Microscopy and Microanalysis, Vol. 23, Issue. S1, p. 336.

Zhao, Wayne and Gribelyuk, Michael 2018. Validation of Minimum Electron Beam Dosage on Characterization of Carbon-Depletion in ULK Dielectric Materials by EELS Quantifications. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 1998.

Zhao, Wayne W. 2018. Effectively Characterize Planar-view FinFET Semiconductor Device Etch Uniformity by Introducing Diffraction Contrast in STEM Imaging. Microscopy and Microanalysis, Vol. 24, Issue. S1, p. 390.

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Zhao, Wayne W. 2019. A BKM to Measure BEOL Liner Thickness from XEDS Mapping with Accuracy Within 1%. Microscopy and Microanalysis, Vol. 25, Issue. S2, p. 772.

Zhao, Wayne W. and Baumann, Frieder 2019. A Case-Study of Bubble Formation Mechanism by Analytical TEM during Evaluation of an Incoming Spin-On-Hardmask at Wafer-Foundries. Microscopy and Microanalysis, Vol. 25, Issue. S2, p. 1784.

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3D Analytical TEM Approach to Effectively Characterize 3D-FinFET Device Features in Semiconductor Wafer-foundries

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