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Subsolidus phase equilibria in the PbO-poor part of the TiO2–PbO–SiO2 system and its application in low-temperature thick-film dielectrics

Published online by Cambridge University Press:  03 March 2011

Marko Hrovat*
Affiliation:
Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
Thomas Maeder
Affiliation:
Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland
Caroline Jacq
Affiliation:
Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland
Janez Holc
Affiliation:
Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
Janez Bernard
Affiliation:
Slovenian National Building and Civil Engineering Institute, Dimičeva 12, SI-1000 Ljubljana, Slovenia
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Subsolidus equilibria in the PbO-poor part of the TiO2–PbO–SiO2 diagram were studied with the aim of investigating possible applications for low-temperature thick-film dielectrics. The tie lines are between PbTiO2 and PbSiO3, and between PbTiO3 and SiO2. The results show that the TiO2, when added to low-temperature softening point glasses, reacts with the PbO from the glass, so forming PbTiO3. These results were applied to a low-temperature firing dielectric, consisting of a lead-rich PbO–SiO2–B2O3 glass filled with a TiO2 powder. The conversion of TiO2 to the PbTiO3 crystalline phase was observed above firing temperatures of approximately 600 °C. The kinetics of the reaction depend on the particle size of the TiO2.

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Articles
Copyright
Copyright © Materials Research Society 2006

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References

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