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Reaction study of cobalt and silicon nitride

Published online by Cambridge University Press:  03 March 2011

Tue Nguyen ,
Herbert L. Ho ,
David E. Kotecki  and
Tai D. Nguyen
Tue Nguyen
Affiliation:
IBM Semiconductor Research Development Center, Hopewell Junction, New York 12533
Herbert L. Ho
Affiliation:
IBM Semiconductor Research Development Center, Hopewell Junction, New York 12533
David E. Kotecki
Affiliation:
IBM Semiconductor Research Development Center, Hopewell Junction, New York 12533
Tai D. Nguyen
Affiliation:
Center for X-ray Optics, Lawrence Berkeley Laboratory, and Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
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Abstract

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4) during anneals from 200 °C−1000 °C in vacuum, Ar, and Ar–H2 ambient (95% Ar and 5% H2) has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of ∼900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 9 , September 1993 , pp. 2354 - 2361
Copyright
Copyright © Materials Research Society 1993

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References

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