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Properties of Indium Molybdenum Oxide Films Fabricated Via High-Density Plasma Evaporation at Room Temperature

Published online by Cambridge University Press:  03 March 2011

Shi-Yao Sun
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University,Tainan 701, Taiwan, Republic of China
Jow-Lay Huang
Affiliation:
Department of Materials Science and Engineering, National Cheng-Kung University,Tainan 701, Taiwan, Republic of China
Ding-Fwu Lii
Affiliation:
Department of Electrical Engineering, Cheng Shiu University,Kaohsiung County 833, Taiwan, Republic of China
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Abstract

The goal of this study was to determine the scattering mechanisms and investigate the optoelectronic properties of indium molybdenum oxide (IMO) films. IMO films were deposited from an In2O3/MoO3 target with a weight ratio of 99/1, 95/5 and 90/10 via high-density plasma evaporation at room temperature. Based on the structural, electrical and optical properties, this study proposed that the neutral complex [(2MoIn)Oi]x dominated at high doping content and high oxygen content, whereas ionized complex Mo‧‧‧In Oi] dominated at low doping level or low oxygen content. Uniform 99/1 IMO films with minimum resistivity of 3.56 × 10−4 Ω cm (corresponding to a mobility of 14.6 cm2V−1s−1 and carrier concentration of 14.3 × 1020 cm−3) and average visible transmittance of ∼85% were produced at an optimum oxygen content of ∼9%. Average optical transmittance exceeding 80% was demonstrated, and a structural change appeared at low oxygen contents.

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Articles
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1Granqvist, C.G. and Hultåker, A.: Transparent and conducting ITO films: New developments and applications. Thin Solid Films 411, 1 (2002).CrossRefGoogle Scholar
2Lewis, B.G. and Paine, D.C.: Applications and processing of transparent conducting oxides. MRS Bull. 25(8), 22 (2000).CrossRefGoogle Scholar
3Ginley, D.S. and Bright, C.: Transparent conducting oxides. MRS Bull. 25(8),15 (2000).Google Scholar
4Shigesato, Y., Takaki, S. and Haranoh, T.: Electrical and structural properties of low resistivity tin-doped indium oxide films. J. Appl. Phys. 71, 3356 (1992).Google Scholar
5Oyama, T., Hashimoto, N., Shimizu, J., Akao, Y., Kojima, H., Alkawa, K. and Suzuki, K.: Low resistance indium tin oxide films on large scale glass substrate. J. Vac. Sci. Technol. A 10, 1682 (1992).CrossRefGoogle Scholar
6Song, P.K., Shigesato, Y., Kamei, M. and Yasui, I.: Electrical and structural properties of Tin-doped indium oxide films deposited by dc sputtering at room temperature. Jpn. J. Appl. Phys. Part 1 38, 2921 (1999).CrossRefGoogle Scholar
7Carcia, P.F., Mclean, R.S., Reilly, M.H., Li, Z.G., Pillione, L.J. and Messier, R.F.: Influence of energetic bombardment on stress, resistivity, and microstructure of indium tin oxide films grown by radio frequency magnetron sputtering on flexible polyester substrates. J. Vac. Sci. Technol. A 21, 745 (2003).CrossRefGoogle Scholar
8Craciun, V., Craciun, D., Chen, Z., Hwang, J. and Singh, R.K.: Room temperature growth of indium tin oxide thin films by ultraviolet-assisted pulsed laser deposition. Appl. Surf. Sci. 168, 118 (2000).CrossRefGoogle Scholar
9Minami, T., Kakumu, T., Takeda, Y. and Takata, S.: Highly transparent and conductive ZnO-In2O3 thin films prepared by d.c. magnetron sputtering. Thin Solid Films 290, 1 (1996).Google Scholar
10Meng, Y., Yang, X.L., Chen, H.X., Shen, J., Jiang, Y.M., Zhang, Z.J. and Hua, Z.Y.: Molybdenum-doped indium oxide transparent conductive thin films. J. Vac. Sci. Technol. A 20, 288 (2002).CrossRefGoogle Scholar
11Meng, Y., Yang, X.L., Chen, H.X., Shen, J., Jiang, Y.M., Zhang, Z.J. and Hua, Z.Y.: A new transparent conductive thin film In2O3:Mo. Thin Solid Films 394, 219 (2001).CrossRefGoogle Scholar
12Yoshida, Y., Gessert, T.A., Perkins, C.L. and Coutts, T.J.: Development of radio-frequency magnetron sputtered indium molybdenum oxide. J. Vac. Sci. Technol. A 21, 1092 (2003).CrossRefGoogle Scholar
13Yoshida, Y., Wood, D.M., Gessert, T.A. and Coutts, T.J.: High-mobility, sputtered films of indium oxide doped with molybdenum. Appl. Phys. Lett. 84, 2097 (2004).CrossRefGoogle Scholar
14Warmsingh, C., Yoshida, Y., Readey, D.W., Teplin, C.W., Perkins, J.D., Parilla, P.A., Gedvilas, L.M., Keyes, B.M. and Ginley, D.S.: High-mobility transparent Mo-doped In2O3 thin films by pulsed laser deposition. J. Appl. Phys. 95, 3831 (2004).CrossRefGoogle Scholar
15Shigesato, Y., Yasui, I., Hayashi, Y., Takaki, S., Oyama, T. and Kamei, M.: Effects of water partial pressure on the activated electron beam evaporation process to deposit tin-doped indium-oxide films. J. Vac. Sci. Technol. A 13, 268 (1995).CrossRefGoogle Scholar
16Sun, S.Y., Huang, J.L. and Lii, D.F.: Effects of oxygen contents on the electrical and optical properties of indium molybdenum oxide films fabricated by high density plasma evaporation. J. Vac. Sci. Technol. A 22, 1235 (2004).CrossRefGoogle Scholar
17Suzuki, K., Hashimoto, N., Oyama, T., Shimizu, J., Akao, Y. and Kojima, H.: Large scale and low resistance ITO films formed at high deposition rates. Thin Solid Films 226, 104 (1993).CrossRefGoogle Scholar
18Chapman, B.: Glow Discharge Processes—Sputtering and Plasma Etching (John Wiley & Sons, Inc., New York, NY, 1980), Chap. 5.Google Scholar
19Frank, G. and Köstlin, H.: Electrical properties and defect model of tin-doped indium oxide layers. Appl. Phys. A 27, 197 (1982).CrossRefGoogle Scholar
20Zhang, D.H. and Ma, H.L.: Scattering mechanisms of charge carriers in transparent conducting oxide films. Appl. Phys. A 62, 487 (1996).Google Scholar
21Freeman, A.J., Poeppelmeier, K.R., Mason, T.O., Chang, R.P.H. and Marks, T.J.: Chemical and thin film strategies for new transparent conducting oxides. MRS Bull. 25(8), 45 (2000).CrossRefGoogle Scholar
22Shigesato, Y., Hayashi, Y. and Haranoh, T.: Doping mechanisms of tin-doped indium oxide films. Appl. Phys. Lett. 61, 73 (1992).CrossRefGoogle Scholar
23Gonzalez, G.B., Cohen, J.B., Hwang, J-H., Mason, T.O., Hodges, J.P. and Jorgensen, J.D.: Neutron diffraction study on the defect structure of indium–tin–oxide. J. Appl. Phys. 89, 2550 (2001).CrossRefGoogle Scholar
24Cullity, B.D.: Elements of X-ray Diffraction, 2nd ed. (Addison-Wesley Publishing Company, Inc., 1978), pp. 363367.Google Scholar
25Ting, J.M. and Tsai, B.S.: DC reactive sputtering deposition of ZnO:Al thin film on glass. Mater. Chem. Phys. 72, 273 (2001).CrossRefGoogle Scholar
26Klug, H.P. and Alexander, L.E.: X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials, 2nd ed. (Wiley, New York, 1974), Chap. 9.Google Scholar
27Ishida, T., Kobayashi, H. and Nakato, Y.: Structures and properties of electron-beam-evaporated indium tin oxide films as studied by x-ray photoelectron spectroscopy and work-function measurements. J. Appl. Phys. 73, 4344 (1993).CrossRefGoogle Scholar
28Kobayashi, H., Ishida, T., Nakamura, K., Nakato, Y. and Tsubomura, H.: Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells. J. Appl. Phys. 72, 5288 (1992).CrossRefGoogle Scholar
29Fan, J.C.C. and Goodenough, J.B.: X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films. J. Appl. Phys. 48, 3524 (1977).CrossRefGoogle Scholar
30Huang, J-L., Jah, J-Y., Yau, B-S., Chen, C-Y. and Lu, H-H.: Reactive magnetron sputtering of indium tin oxide films on acrylics-morphology and bonding state. Thin Solid Films 370, 33 (2000).CrossRefGoogle Scholar
31Mori, N.: Superconductivity in transparent Sn-doped In2O3 films. J. Appl. Phys. 73, 1327 (1993).CrossRefGoogle Scholar
32Wang, Z. and Hu, X.: Structural and electrochemical characterization of ‘open-structured’ ITO films. Thin Solid Films 392, 22 (2001).CrossRefGoogle Scholar
33Dawar, A.L. and Joshi, J.C.: Semiconducting transparent thin films: Their properties and applications. J. Mater. Sci. 19, 1 (1984).CrossRefGoogle Scholar
34Wu, W-F. and Chiou, B-S.: Properties of radio-frequency magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing. Thin Solid Films 247, 201 (1994).Google Scholar
35Matsuoka, T., Kuwata, J., Fujita, Y. and Abe, A.: An XPS study of blackening of indium-tin oxide film during deposition of dielectric films by rf magnetron sputtering. Jpn. J. Appl. Phys. 27, L1199 (1988).CrossRefGoogle Scholar
36Lee, J.K., Kim, H.M., Park, S.H., Kim, J.J. and Rhee, B.R.: Heat treatment effects on electrical and optical properties of ternary compound In2O3-ZnO films. J. Appl. Phys. 92, 5761 (2002).CrossRefGoogle Scholar
37Moss, T.S.: Optical Properties of Semiconductors (Butterworths, London, U.K., 1961).Google Scholar
38Sanon, G., Rup, R. and Mansingh, A.: Band-gap narrowing and band structure in degenerate tin oxide (SnO2) films. Phys. Rev. B 44, 5672 (1991).CrossRefGoogle ScholarPubMed