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Preparation of epitaxial Pb(Mg1/3Ta2/3)O3 thin film by chemical solution deposition

Published online by Cambridge University Press:  31 January 2011

D. S. Jeong ,
J-H. Moon ,
B-T. Lee  and
J. H. Kim
D. S. Jeong
Affiliation:
Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, South Korea
J-H. Moon
Affiliation:
Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, South Korea
B-T. Lee
Affiliation:
Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, South Korea
J. H. Kim*
Affiliation:
Photonic and Electronic Thin Film Laboratory, Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Kwangju 500–757, South Korea
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

Pb(Mg1/3Ta2/3)O3 (PMT) powders and heteroepitaxial thin films on (001) SrTiO3 (STO) substrates were prepared by the chemical solution deposition method. The phase development in PMT powders and thin films was investigated by x-ray diffraction, and the microstructure of PMT thin films was studied by transmission electron microscopy. Phase transformation from pyrochlore to perovskite in the PMT powder samples occurred in the temperature range of 700–800 °C, and perovskite phase was mainly observed in samples annealed above 800 °C. However, perovskite phase in PMT thin films on STO substrates was formed mainly in samples annealed as low as 750 °C/1 h, and it shows an epitaxial orientation relationship of [100](001)PMT∥[100](001)STO.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 11 , November 2002 , pp. 2884 - 2887
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1.Tyunina, M., Levoska, J., Sternberg, A., Sternberg, S., and Leppavuori, S., J. Appl. Phys. 86, 5179 (1999).Google Scholar
2.Bowman, R.M., Catalan, G., Corbett, M.H., and Gregg, J.M., J. Mater. Sci. Mater. Electron. 11, 543 (2000).CrossRefGoogle Scholar
3.Lu, Y-L., Gaynor, B., Hsu, C., Jin, G., Golomb, M.C., Wang, F., Zhao, J., Wang, S-Q., Yip, P., and Drehman, A.J., Appl. Phys. Lett. 74, 3038 (1999).CrossRefGoogle Scholar
4.Takeshima, Y., Shiratsuyu, K., Takagi, H., and Tomono, K., Jpn. J. Appl. Phys. 34, 5083 (1995).Google Scholar
5.Kighelman, Z., Damjanovic, D., Seifert, A., Sagalowicz, L., and Setter, N., Appl. Phys. Lett. 73, 2281 (1998).CrossRefGoogle Scholar
6.Bokov, V.A. and Myl, I.E.’nikova, Sov. Phys. Solid State 2, 2428 (1961).Google Scholar
7.Lu, Z.G., Flicoteaux, C., and Calvarin, G., Mater. Res. Bull. 31, 445 (1996).Google Scholar
8.Akbas, M.A. and Davies, P.K., J. Mater. Res. 12, 2617 (1997).CrossRefGoogle Scholar
9.Chae, M-C. and Kim, N-K., Ferroelectrics 209, 603 (1998).CrossRefGoogle Scholar
10.Chae, M-C., Kim, N-K., Kim, J-J., and Cho, S-H., Ferrelectrics 211, 25 (1998).CrossRefGoogle Scholar
11.Lee, C.H. and Lee, T.Y., Mater. Chem. Phys. 69, 1 (2001).CrossRefGoogle Scholar
12.Kim, J.H. and Lange, F.F., J. Mater. Res. 14, 1626 (1999).CrossRefGoogle Scholar
13.Kim, J.H. and Lange, F.F., J. Mater. Res. 14, 4004 (1999).CrossRefGoogle Scholar
14.Kim, J.H., Ha, T-J., Cheon, C.I., and Lange, F.F., J. Cryst. Growth. 225, 366 (2001).Google Scholar
15.Seifert, A., Lange, F.F., and Speck, J., J. Mater. Res. 10, 680 (1995).CrossRefGoogle Scholar
16.Hayes, J.M., Gururaja, T.R., Geoffroy, G.L., and Cro, L.E., Mater. Lett. 5, 396 (1987).CrossRefGoogle Scholar
17.Sumi, K., Qiu, H., Kamei, H., Moriya, S., Murai, M., Shimada, M., Nishiwaki, T., Takei, T., Miyashita, S., and Hashimoto, M., Thin Solid Films 315, 77 (1998).Google Scholar