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Nanocrystalline Pt interfacial layer formed by stress in a SrBi2Ta2O9–Pt–Ti ferroelectric capacitor

Published online by Cambridge University Press:  31 January 2011

Ching-Chich Leu
Ching-Chich Leu*
Affiliation:
Department of Chemical and Materials Engineering, National University of Kaohsiung, Nan-Tzn District, Kaohsiung 811, Taiwan, Republic of China; and Center for Micro/Nano Science and Technology, National Cheng Kung University, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

A thin nanocrystalline Pt interfacial layer (IL) was observed near the SrBi2Ta2O9(SBT)–Pt interface after crystallization treatment in a SBT–Pt–Ti ferroelectric capacitor. Apart from its Pt content, this IL also incorporated large numbers of Ti and O atoms, which arose from the Ti adhesion layer and the SBT film, respectively. These atoms reacted to form TiOx, which resulted in a volume expansion during the annealing process. This phenomenon led to a putative shear stress being exerted on the Pt layer. Under such stress and thermal conditions, we speculate that the nanocrystalline Pt IL developed from the Pt bottom electrode.

Keywords

AdhesionFerroelectricTransmission electron microscopy (TEM)
Type
Articles
Information
Journal of Materials Research , Volume 22 , Issue 6 , June 2007 , pp. 1718 - 1725
Copyright
Copyright © Materials Research Society2007

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