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Investigations on interfacial reactions at reentrant corners

Published online by Cambridge University Press:  31 January 2011

Chao-Hong Wang ,
Chen-Nan Chiu  and
Sinn-Wen Chen
Chao-Hong Wang
Affiliation:
Department of Chemical Engineering, National Chung Cheng University, Chiayi, Taiwan 621
Sinn-Wen Chen*
Affiliation:
Department of Chemical Engineering, National Tsing Hua University, Hsin-chu, Taiwan 300
*
a)Address all correspondence to this author. e-mail: [email protected]
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Abstract

Interfacial reactions in Bi/Ni, Sn/Co, and Sn/Te systems that exhibit unique cruciform pattern formation are investigated. Different from the couples examined in the past, the solid substrates, Ni, Co, and Te, are placed outside the couples while constituents of low melting temperature, Bi and Sn, are placed in the center. With interfacial reactions proceeding in these couples, the reaction products grow inwardly at reentrant corners, and shrinking of the reaction layer at the corner is observed. As a result of the volumetric changes caused by interfacial reactions, stresses are built up in the couples, and stress-intensified locations are found at reentrant corners. The built-up stresses alter the diffusion rates and thus retard the reaction at the corners. Instead of forming cruciform patterns, the inner reactant is of flat shuriken shape after reactions.

Keywords

DiffusionJoiningMicrostructure
Type
Articles
Information
Journal of Materials Research , Volume 25 , Issue 5 , May 2010 , pp. 999 - 1003
Copyright
Copyright © Materials Research Society 2010

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References

REFERENCES

1.Scheil, E.The appearance of a high power of crystallization in the formation of iron–zinc alloys. Z. Metallkd. 27, 76 (1935)Google Scholar
2.Kieffer, R., Kölbl, F.Scaling performance and mechanism of oxidation of heat- and oxidation-resistant cemented carbides, particularly titanium carbide base compositions. Z. Anorg. Chem. 262, 229 (1950)CrossRefGoogle Scholar
3.Mackowiak, J., Shreir, L.L.The nature and growth of interaction layers formed during the reaction between solid titanium and liquid aluminium. J. Less-Common Met. 1, 456 (1959)CrossRefGoogle Scholar
4.Barbier, F., Blanc, J.Corrosion of martensitic and austenitic steels in liquid gallium. J. Mater. Res. 14, 737 (1999)Google Scholar
5.Xu, Q., Zhang, H., Ding, B., Hu, Z.Nature and growth of interaction layers formed during the reaction between solid Ni and liquid Al. J. Mater. Sci. Technol. 18, 512 (2002)Google Scholar
6.Chang, W.C.A new surface finish for solder joints exhibiting both low consumption rate and oxidation resistance. Master's Thesis, National Central University, Taoyuan, Taiwan 2003Google Scholar
7.Chen, S-W., Chiu, C-N.Unusual cruciform pattern interfacial reactions in Sn/Te couples. Scr. Mater. 56, 97 (2007)CrossRefGoogle Scholar
8.Chiu, C-N., Wang, C-H., Chen, S-W.Interfacial reactions in the Sn–Bi/Te couples. J. Electron. Mater. 37, 40 (2008)CrossRefGoogle Scholar
9.Wang, C-H., Chen, S-W.Cruciform pattern formation in Sn/Co couples. J. Mater. Res. 22, 3404 (2007)Google Scholar
10.Wang, C-C., Chen, S-W.Sn/Co solid/solid interfacial reactions. Intermetallics 16, 524 (2008)CrossRefGoogle Scholar
11.Okamoto, H.Binary Alloy Phase Diagram 2nd ed. (ASM Material Park, OH 1990)794Google Scholar
12.Duchenko, O.V., Dybkov, V.I.Determination of NiBi3 reaction diffusion constants in Ni–Bi couples. J. Mater. Sci. Lett. 14, 1725 (1995)CrossRefGoogle Scholar
13.van Loo, F.L.J.Multiphase diffusion in binary and ternary solid-state systems. Prog. Solid State Chem. 20, 47 (1990)Google Scholar
14.Lee, M.S., Chen, C., Kao, C.R.Formation and absence of intermetallic compounds during solid-state reactions in the Ni–Bi system. Chem. Mater. 11, 292 (1999)CrossRefGoogle Scholar
15.Basic Database for Crystal Structures. National Institute for Materials Science (NIMS) http://crystdb.nims.go.jp/Google Scholar
16.Aoyagi, M.Stress-induced migration model based on atomic migration. J. Mater. Res. 19, 2349 (2004)CrossRefGoogle Scholar
17.Zhao, Y., Aziz, M.J., Gossmann, H.J., Mitha, S., Schiferl, D.Activation volume for boron diffusion in silicon and implications for strained films. Appl. Phys. Lett. 74, 31 (1999)CrossRefGoogle Scholar