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Influence of Ta content on the physical properties of SrBi2Ta2O9 ferroelectric thin films

Published online by Cambridge University Press:  03 March 2011

Fan-Yi Hsu ,
Ching-Chich Leu ,
Chao-Hsin Chien  and
Chen-Ti Hu
Fan-Yi Hsu
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
Ching-Chich Leu
Affiliation:
Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, Republic of China
Chao-Hsin Chien
Affiliation:
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan, Republic of China
Chen-Ti Hu*
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan, Republic of China
*
a) Address all correspondence to this author. e-mail: [email protected]
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Abstract

We have investigated the effect that the Ta content has on the ferroelectric properties of strontium bismuth tantalate (SBT) thin films synthesized using metalorganic decomposition (MOD) and spin coating techniques. The physical properties of these SBT samples were strongly dependent upon the Ta ratio. Polarization measurements revealed that Ta-deficient SBT exhibited a relatively low coercive field (2Ec ∼ 87 kV/cm) and a high remanent polarization (2Pr ∼ 15 μC/cm2). The value of 2Pr decreased as the Ta ratio in SBT increased. The improved ferroelectric properties of the Ta-deficient SBT samples may have resulted from the uniformly well-grown bismuth-layered-structured (BLS) phases of the films and their highly preferential orientation along the a and b axes. We suggest that the incorporation of Ta vacancies plays an important role in enhancing the crystallinities and microstructures of Ta-deficient SBT films.

Keywords

Crystal growthFerroelectricityTa
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 12 , December 2006 , pp. 3124 - 3133
Copyright
Copyright © Materials Research Society 2006

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