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Influence of hole carrier density and sintering temperature on the electronic properties of magnetoresistive La0.7Pb0.3Mn1⊟xRuxO3 (0.0 ≤ x ≤x 0.4)

Published online by Cambridge University Press:  31 January 2011

Ranjan Kumar Sahu ,
Manju Lata Rao ,
Solomon Sundar Manoharan ,
Dieter Elefant ,
Peter Verges  and
Claus M. Schneider
Ranjan Kumar Sahu
Affiliation:
Materials Chemistry Laboratory, Department of Chemistry, Indian Institute of Technology Kanpur, Uttar Pradesh-208 016, India
Manju Lata Rao
Affiliation:
Materials Chemistry Laboratory, Department of Chemistry, Indian Institute of Technology Kanpur, Uttar Pradesh-208 016, India
Solomon Sundar Manoharan*
Affiliation:
Materials Chemistry Laboratory, Department of Chemistry, Indian Institute of Technology Kanpur, Uttar Pradesh-208 016, India
Dieter Elefant
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtz Straße 20, D-01069, Dresden, Germany
Peter Verges
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtz Straße 20, D-01069, Dresden, Germany
Claus M. Schneider
Affiliation:
Institute for Solid State and Materials Research Dresden, Helmholtz Straße 20, D-01069, Dresden, Germany
*
b)Address all correspondence to this author.[email protected]
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Abstract

A novel magnetic pair-making interaction between Mn and Ru shows a strong correlation between the magnetic ordering and electronic transport, which was well exemplified in the investigation of bulk polycrystalline samples of La0.7Pb0.3Mn1⊟xRuxO3 and La0.6Pb0.4Mn1⊟xRuxO3, where 0.0 ≤ x ≤ 0.4. The metal-insulator transition (Tρ) complementing the Curie temperature (Tc) was observed up to 30% of Ru in La0.7Pb0.3Mn1⊟xRuxO3, and extended up to 40% of Ru in La0.6Pb0.4Mn1⊟xRuxO3, showing a unique double-exchange ferromagnetic exchange interaction between Mn and Ru ions. An upturn in resistance due to charge carrier localization at low temperatures (T<0.5 Tc) for more than 20% Ru doping was due to a dominant hole carrier density contribution rather than to grain boundary effects as inferred from the scanning electron microscopy and energy dispersive x-ray studies of the samples sintered at 1200 and 1400 °C. The charge localization effect of the eg electrons was removed by tuning the hole carrier density as demonstrated in the La0.6Pb0.4Mn1⊟xRuxO3 samples. Long range correlations between magnetism and transport in this series was attributed to the presence of mixed valence Ru(IV/V) and Mn(III)/(IV) pair, which shows a unique double exchange mediated interaction.

Type
Articles
Information
Journal of Materials Research , Volume 17 , Issue 12 , December 2002 , pp. 3090 - 3097
Copyright
Copyright © Materials Research Society 2002

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References

1.Zener, C., Phys. Rev. 82, 403 (1951); P.W. Anderson and H. Hasegawa, Phys. Rev. 100, 675 (1955); P.G. deGennes, Phys. Rev. 118, 141 (1960).CrossRefGoogle Scholar
2.Millis, A.J., Littlewood, P.B., and Shraiman, B.I., Phys. Rev. Lett. 74, 5144 (1995).Google Scholar
3.Jin, S., Tiefel, T.H., McCormack, M., Fastnacht, R.A., Ramesh, R., and Chien, L.H., Science 264, 413 (1994).CrossRefGoogle Scholar
4.Wollan, O. and Koehler, W.C., Phys. Rev. 100, 545 (1955).Google Scholar
5.Ju, H.L. and Sohn, H., J. Magn. Magn. Mater. 167, 200 (1997).CrossRefGoogle Scholar
6.Turilli, G. and Licci, F., Phys. Rev. B 54, 13052 (1996).Google Scholar
7.Cabeza, O., Long, M., Sevevac, C., Bari, M.A., Muirhead, C.M., Francesconi, M.G., and Greaves, C., J. Phys.: Condens. Matter 11, 2569 (1999).Google Scholar
8.Sun, J.R., Rao, G.H., Shen, B.G., and Wong, H.K., Appl. Phys. Lett. 73, 2998 (1998).Google Scholar
9.Li, X-G., Fan, X.J., Ji, G., Wu, W.B., Wong, K.H., Choy, C.L., and Ku, H.C., J. Appl. Phys. 85, 1663 (1999).CrossRefGoogle Scholar
10.Feng, J-W., Ye, C., and Hwang, L-P., Phys. Rev. B 61, 12271 (2000).Google Scholar
11.Sahu, R.K. and Manoharan, S. Sundar, Appl. Phys. Lett. 77, 2382 (2000); R.K. Sahu, M. Qureshi, M.L. Rao, S. Sundar Manoharan, and A.K. Nigan, Appl. Phys. Lett. 80, 88 (2002).CrossRefGoogle Scholar
12.Vanitha, P.V., Arulraj, A., Raju, A.R., and Rao, C.N.R., C.R. Acad. Sci. Paris 2, 595 (1999).Google Scholar
13.Shannon, R.D. and Prewitt, C.T., Acta Crystallogr. B, 25, 925 (1969).Google Scholar
14.Sahu, R.K., Hu, Z., Rao, M.L., Manoharan, S. Sundar, Schmidt, T., Richter, B., Knupfer, M., Golden, M., Fink, J., and Schneider, C.M., Phys. Rev. B 66, 1444 (2002).Google Scholar
15.Sahu, R.K. and Manoharan, S. Sundar, J. Appl. Phys. 91, 7517 (2002).CrossRefGoogle Scholar
16.Ju, H.L., Gopalakrishnan, J., Peng, J.L., Li, Qi, Xiong, G.C., Venkatesan, T., and Greene, R.L., Phys. Rev. B 51, 6143 (1995).CrossRefGoogle Scholar
17.Abdelmoula, N., Giudara, K., Rouhou, A.C., Dhahri, E., and Joubert, J.C., J Solid State Chem. 151, 139 (2000).CrossRefGoogle Scholar
18.Helmholt, R. von, Wecker, J., Holgapfel, B., Schultz, L., and Samwer, K., Phys. Rev. Lett. 71, 2331 (1993); M. Kasai, Y. Kanke, T. Ohno, and Y. Kozono, J. Appl. Phys. 72, 534 (1992).Google Scholar
19.Raychaudhuri, P., Mukherjee, S., A.Nigam, K., John, J., Vaisnav, U.D., Pinto, R., and Mandal, P., J. Appl. Phys. 86, 5718 (1999).Google Scholar
20.J.M.D. Coey, Viret, M., Ranno, L., and Ounadjela, K., Phys. Rev. Lett. 75, 3910 (1995).Google Scholar