Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-22T22:01:39.811Z Has data issue: false hasContentIssue false

Grain Growth, Stress, and Impurities in Electroplated Copper

Published online by Cambridge University Press:  31 January 2011

S. H. Brongersma
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
E. Kerr
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, andScience of Materials, Trinity College, Dublin, Ireland
I. Vervoort
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
A. Saerens
Affiliation:
Department of Metallurgy and Materials Engineering, K.U.-Leuven, B-3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium, andElectrical Engineering Department, K.U.-Leuven, B-3001 Leuven, Belgium
Get access

Abstract

The widely observed secondary grain growth in electroplated Copper layers is shown to be incomplete after the sheet resistance and stress of the layer appear to have stabilized. Instead the layer is in an intermediate state with a grain size distribution that depends on the plating conditions. Further extensive annealing at high temperatures results in an additional considerable enlargement of the grain structure, accompanied by an additional decrease of the sheet resistance and desorption of impurities that were incorporated during plating.

Type
Articles
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Edelstein, D.C., Proc. SPIE Conf, Multilevel Interconnect Technol. II 3508, 8 (1998).Google Scholar
Gross, M.E., Takahashi, K., Lingk, C., Ritzdorf, T., and Gibbons, K., Conf. Proc. ULSI XIV 1999, p. 51.Google Scholar
Richard, E., Vervoort, I., Brongersma, S.H., Bender, H., Beyer, G., Palmans, R., Lagrange, S., and Maex, K., Conf. Proc. Advanced Metallization Conference 1999, edited by Gross, Mihal E. (Mater. Res. Soc.).Google Scholar
Brongersma, S.H., Vervoort, I., Judelewicz, M., Bender, H., Conard, T., Vandervorst, W., Beyer, G., Richard, E., Palmans, R., Lagrange, S., and Maex, K., Proc. of IITC-1999, p. 290.Google Scholar
Walther, D., Gross, M.E., K. Evans-Lutterodt, Brown, W.L., Oh, M., Merchant, S., and Naresh, P., in Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, edited by Oehrlein, G.S., Maex, K., Joo, Y-C., Ogawa, S., and Wetzel, J.T. (Mat. Res. Soc. Proc. 612, Warrendale, PA, 2001), p. D10.1.1.Google Scholar
Brongersma, S.H., Kerr, E., Vervoort, I., Richard, E., and Maex, K., Accepted for Conf. Proc. Advanced Metallization Conference 2000, edited by Edelstein, D., Dixit, G., Yasuda, Y., and Ohba, T. (Mat. Res. Soc.), p. 161.Google Scholar
Lee, H., Lopatin, S.D., and Wong, S.S., Proc. of the IITC-2000, p. 114.Google Scholar
Brongersma, S.H., Vervoort, I., Richard, E., and Maex, K., Proc. of the IITC-2000, p. 31.Google Scholar
Harper, J.M.E., Cabral, C. Jr., Andricacos, P.C., Gignac, L., Noyan, I.C., Rodbell, K.P., and Hu, C.K., J. Appl. Phys. 86, 2516 (1999).Google Scholar
Gribelyuk, M.A., Malhotra, S.G., Locke, P.S., DeHaven, P., Fluegel, J., Parks, C., Simon, A.H., and Murphy, R., Proc. of the IITC-2000, p. 188.Google Scholar
Machlin, E.S., Materials Science in Microelectronics, Chapter VI, p. 157.Google Scholar
Raghunathan, K. and Weil, R., Surf. Technol. 10, 331 (1980).Google Scholar
Sheppard, K. and Weil, R., in Thin Films: The Relationship of Structure to Properties, edited by Aita, C.R. and SpeeHarsha, K.S., (Mat. Res. Soc. Symp. Proc. 47, Pittsburgh, PA, 1985), p. 127.Google Scholar
Hau-Riege, S.P. and Thompson, C.V., Appl. Phys. Lett. 76, 309 (2000).Google Scholar
Gupta, D., in Mat. Res. Soc. Proc. 337, 209 (1994).Google Scholar
Thouless, M.D., Gupta, J., and Harper, J.M.E., J. Mater. Res. 8, 1845 (1993).Google Scholar