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Fabrication of Sr2Nb2O7 thin films by sol-gel processing

Published online by Cambridge University Press:  03 March 2011

Alamanda V. Prasadarao ,
Ulagaraj Selvaraj  and
Sridhar Komarnenici
Alamanda V. Prasadarao*
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Ulagaraj Selvaraj*
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
Sridhar Komarnenici*
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802
*
a)Present address: School of Chemistry, Andhra University, AP 530003, India.
b)Present address: Partculate Materials Center, The Pennsylvania State University, University Park, Pennsylvania 16802.
c)Also with the Department of Agronomy.
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Abstract

Sol-gel Sr2Nb2O7 thin films were deposited on Si(100) and Pt-coated Si substrates for the first time by spin-coating. The Sr2Nb2O7 precursor solution was prepared from strontium metal dissolved in 2-methoxyethanol, acetylacetone, and niobium ethoxide. The formation of phase pure Sr2Nb2O7 occurred via an intermediate perovskite phase of composition close to Sr0.82NbO3. Crack-free Sr2Nb2O7 films of ∼0.4 μm thickness were deposited on these substrates using a single-coating followed by heat treatment at 850 °C for 12 h. SEM microstructure and thin film XRD results indicated the deposition of a grain-oriented film on the Pt-coated Si substrate. The room temperature dielectric constant and the loss values of the film measured at 10 kHz are 45 and 0.045, respectively.

Type
Articles
Information
Journal of Materials Research , Volume 10 , Issue 3 , March 1995 , pp. 704 - 707
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

1Nanamatsu, S., Kimura, M., Doi, K., Matsushita, S., and Yamada, N., Ferroelectrics 8, 511 (1974).CrossRefGoogle Scholar
2Kimura, M., Nanamatsu, S., Doi, K., and Matsushita, S., Jpn. J. Appl. Phys. 13, 1473 (1974).CrossRefGoogle Scholar
3Yamamoto, J. K. and Bhalla, A. S., Mater. Lett. 10, 497 (1991).CrossRefGoogle Scholar
4Ishizawa, N. and Marumo, F., Acta Crystallogr. B 31, 1912 (1975).CrossRefGoogle Scholar
5Nanamatsu, S., Kimura, M., Doi, K., and Takahashi, M., J. Phys. Soc. Jpn. 30, 300 (1971).CrossRefGoogle Scholar
6Akishige, Y., Kobayashi, M., Ohi, K., and Sawaguchi, E., J. Phys. Soc. Jpn. 55, 2270 (1986).CrossRefGoogle Scholar
7Yamamoto, N., Acta Crystallogr. A 38, 780 (1982).CrossRefGoogle Scholar
8Yamamoto, J. K., Ph.D. Thesis, The Pennsylvania State University, University Park, PA (1990).Google Scholar
9Fukuhara, M., Huang, C. Y., Bhalla, A. S., and Newnham, R. E., J. Mater. Sci. 26, 61 (1991).CrossRefGoogle Scholar
10Ishitani, A. and Kimura, M., Appl. Phys. Lett. 29, 289 (1976).CrossRefGoogle Scholar
11Blinker, C. J. and Scherer, G. H., The Physics and Chemistry of Sol-Gel Processing (Academic Press, New York, 1990).Google Scholar
12Prasadarao, A. V., Selvaraj, U., Komarneni, S., and Bhalla, A. S., J. Mater. Res. 7, 2859 (1992).CrossRefGoogle Scholar
13Prasadarao, A. V., Selvaraj, U., Komarneni, S., and Bhalla, A. S., J. Am. Ceram. Soc. 75, 2697 (1992).CrossRefGoogle Scholar
14Prasadarao, A. V., Selvaraj, U., Komarneni, S., and Bhalla, A. S., Ferroelectrics Lett. 14, 65 (1992).CrossRefGoogle Scholar
15Selvaraj, U., Prasadarao, A. V., Komarneni, S., and Roy, R., J. Am. Ceram. Soc. 75, 1167 (1992).CrossRefGoogle Scholar