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Epitaxical nucleation of polycrystalline silicon carbide during chemical vapor deposition

Published online by Cambridge University Press:  31 January 2011

Brian W. Sheldon ,
Theodore M. Besmann ,
Karren L. More  and
Thomas S. Moss
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, Rhode Island 02912, and Oak Ridge Associated Universities, Oak Ridge, Tennessee 37831
Theodore M. Besmann
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Karren L. More
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
Thomas S. Moss
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
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Abstract

Polycrystalline silicon carbide was deposited from methyltrichlorosilane in cold-walled and hot-walled reactors, on (100) SiC surface layers that were formed on (100) Si wafers. The initial stages of the process were studied by electron microscopy after relatively short deposition times. Submicron surface features nucleated with a specific crystallographic orientation with respect to the substrate, where h111j planes in th—SiC substrate coincided with h0001j planes in the a–SiC features. These a–SiC features occurred only at twins on h111j planes of the b–SiC substrate. This demonstrates that nucleation under these conditions is controlled by defects in the substrate. Surface contamination and the reactor configuration also had substantial effects on nucleation.

Type
Articles
Information
Journal of Materials Research , Volume 8 , Issue 5 , May 1993 , pp. 1086 - 1092
Copyright
Copyright © Materials Research Society 1993

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References

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