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Electronic structure of free-standing InP and InAs nanowires

Published online by Cambridge University Press:  03 March 2011

B. Lassen ,
M. Willatzen ,
R. Melnik  and
L.C. Lew Yan Voon
B. Lassen*
Affiliation:
Department of Physics, University of Lund, 22100 Lund, Sweden
M. Willatzen
Affiliation:
Mads Clausen Institute, University of Southern Denmark, DK-6400 Sønderborg, Denmark
R. Melnik
Affiliation:
Wilfrid Laurier University, Waterloo, Ontario N2L 3C5, Canada
L.C. Lew Yan Voon
Affiliation:
Department of Physics, Wright State University, Dayton, Ohio 45435
*
a) Address all correspondence to this author.e-mail: [email protected]
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Abstract

An eight-band k·p theory that does not suffer from the spurious solution problem is demonstrated. It is applied to studying the electronic properties of InP and InAs free-standing nanowires. Band gaps and effective masses are reported as a function of size, shape, and orientation of the nanowires. We compare our results with experimental work and with other calculations.

Keywords

Electronic structureNanostructureSemiconductingSpurious solutions
Type
Articles
Information
Journal of Materials Research , Volume 21 , Issue 11 , November 2006 , pp. 2927 - 2935
Copyright
Copyright © Materials Research Society 2006

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References

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